发明申请
US20060141291A1 High rate buffer layer for IBAD MgO coated conductors 有权
用于IBAD MgO涂层导体的高速缓冲层

High rate buffer layer for IBAD MgO coated conductors
摘要:
Articles are provided including a base substrate having a layer of an oriented material thereon, and, a layer of hafnium oxide upon the layer of an oriented material. The layer of hafnium oxide can further include a secondary oxide such as cerium oxide, yttrium oxide, lanthanum oxide, scandium oxide, calcium oxide and magnesium oxide. Such articles can further include thin films of high temperature superconductive oxides such as YBCO upon the layer of hafnium oxide or layer of hafnium oxide and secondary oxide.
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