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17 条记录 (耗时 0.012 秒)

    High rate buffer layer for IBAD MgO coated conductors
    1.
    发明申请
    High rate buffer layer for IBAD MgO coated conductors 有权
    用于IBAD MgO涂层导体的高速缓冲层

    公开(公告)号：US20060141291A1

    公开(公告)日：2006-06-29

    申请号：US11021800

    申请日：2004-12-23

    申请人： Stephen Foltyn ,  Quanxi Jia ,  Paul Arendt

    发明人： Stephen Foltyn ,  Quanxi Jia ,  Paul Arendt

    IPC分类号： H01L39/24 ,  B32B15/04 ,  B32B9/00 ,  B32B19/00

    CPC分类号： H01L39/2461

    摘要： Articles are provided including a base substrate having a layer of an oriented material thereon, and, a layer of hafnium oxide upon the layer of an oriented material. The layer of hafnium oxide can further include a secondary oxide such as cerium oxide, yttrium oxide, lanthanum oxide, scandium oxide, calcium oxide and magnesium oxide. Such articles can further include thin films of high temperature superconductive oxides such as YBCO upon the layer of hafnium oxide or layer of hafnium oxide and secondary oxide.

    摘要翻译： 提供了包括其上具有取向材料层的基底基材和在取向材料层上的氧化铪层的制品。 氧化铪层还可以包括二氧化铈，氧化钇，氧化镧，氧化钪，氧化钙和氧化镁等次级氧化物。 这样的制品还可以包括氧化铪层或二氧化铪层上的高温超导氧化物如YBCO的薄膜。

    Buffer layer for thin film structures
    2.
    发明申请
    Buffer layer for thin film structures 有权
    薄膜结构缓冲层

    公开(公告)号：US20050019616A1

    公开(公告)日：2005-01-27

    申请号：US10624855

    申请日：2003-07-21

    申请人： Stephen Foltyn ,  Quanxi Jia ,  Paul Arendt ,  Haiyan Wang

    发明人： Stephen Foltyn ,  Quanxi Jia ,  Paul Arendt ,  Haiyan Wang

    IPC分类号： H01L39/24 ,  B32B9/00

    CPC分类号： H01L39/2461 ,  Y10S428/93

    摘要： A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

    摘要翻译： 提供了包括基底和钛酸锶和钌酸锶的混合物层的复合结构。 超导制品可以包括包含氧化镁的最外层，钛酸锶的缓冲层或钛酸锶和钌酸锶的混合物的复合结构和在缓冲层上的诸如YBCO的超导材料的顶层。

    Arrays of long carbon nanotubes for fiber spinning
    4.
    发明申请
    Arrays of long carbon nanotubes for fiber spinning 审中-公开
    用于纤维纺丝的长碳纳米管阵列

    公开(公告)号：US20070116631A1

    公开(公告)日：2007-05-24

    申请号：US11415734

    申请日：2006-05-01

    申请人： Qingwen Li ,  Yuntian Zhu ,  Paul Arendt ,  Raymond DePaula ,  James Groves

    发明人： Qingwen Li ,  Yuntian Zhu ,  Paul Arendt ,  Raymond DePaula ,  James Groves

    IPC分类号： D01F9/12

    CPC分类号： D01F9/127 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/04 ,  C01B2202/08 ,  C01B2202/34 ,  C01B2202/36 ,  D01F9/1271 ,  D01F9/1273 ,  D01F9/1277

    摘要： An array of long carbon nanotubes (i.e. an array where the average length of the nanotubes is greater than 0.5 millimeters) is prepared by exposing a supported catalyst at elevated temperature to a gas mixture of hydrocarbon, inert gas, and a relatively low percentage of hydrogen. Addition of water vapor to the gas mixture may result in an increase in the length of the nanotubes, an increase the rate of growth, and a decrease in contamination of the array by amorphous carbon. The temperature and growth time are also chosen to minimize the amount of amorphous carbon that forms on the array. Fibers spun from the array have a higher tensile strength compared to known CNT fibers.

    摘要翻译： 长碳纳米管阵列（即其中纳米管的平均长度大于0.5毫米的阵列）通过将升高的温度下的负载型催化剂暴露于烃，惰性气体和相对低百分比的氢的气体混合物来制备 。 向气体混合物中加入水蒸汽可能导致纳米管的长度增加，生长速率的增加，以及无定形碳对阵列的污染的减少。 还选择温度和生长时间以最小化在阵列上形成的无定形碳的量。 与已知的CNT纤维相比，从阵列纺出的纤维具有较高的拉伸强度。

    Coated conductors
    5.
    发明申请
    Coated conductors 有权
    涂层导体

    公开(公告)号：US20070012975A1

    公开(公告)日：2007-01-18

    申请号：US11486731

    申请日：2006-07-13

    申请人： Paul Arendt ,  Stephen Foltyn ,  Liliana Stan ,  Igor Usov ,  Haiyan Wang

    发明人： Paul Arendt ,  Stephen Foltyn ,  Liliana Stan ,  Igor Usov ,  Haiyan Wang

    IPC分类号： H01L29/94

    CPC分类号： H01L39/2461

    摘要： Articles are provided including a base substrate having a layer of an IBAD oriented material thereon, and, a layer of barium-containing material selected from the group consisting of barium zirconate, barium hafnate, barium titanate, barium strontium titanate, barium dysprosium zirconate, barium neodymium zirconate and barium samarium zirconate, or a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the layer of an IBAD oriented material. Such articles can further include thin films of high temperature superconductive oxides such as YBCO upon the layer of barium-containing material selected from the group consisting of barium zirconate, barium hafnate, barium titanate, barium strontium titanate, barium dysprosium zirconate, barium neodymium zirconate and barium samarium zirconate, or a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates.

    摘要翻译： 提供了包括其上具有IBAD取向材料层的基底基材和选自锆酸钡，铪酸钡，钛酸钡，钛酸钡钡，锆酸镝钡，钡钡锶钡的钡基材料层 钕锆酸镧和锆酸钡，或选自稀土锆酸盐和稀土铪的立方体金属氧化物材料在IBAD取向材料层上。 这样的制品还可以包括选自锆酸钡，铪酸钡，钛酸钡，钛酸锶钡，锆酸镧锆，锆酸钕锆酸钡等的含钡材料层的高温超导氧化物如YBCO的薄膜，以及 钡锆酸钡或选自稀土锆酸盐和稀土铪矿的立方金属氧化物材料。

    Architecture for coated conductors
    6.
    发明申请
    Architecture for coated conductors 有权
    涂层导体的结构

    公开(公告)号：US20060142164A1

    公开(公告)日：2006-06-29

    申请号：US11021171

    申请日：2004-12-23

    申请人： Stephen Foltyn ,  Paul Arendt ,  Haiyan Wang ,  Liliana Stan

    发明人： Stephen Foltyn ,  Paul Arendt ,  Haiyan Wang ,  Liliana Stan

    IPC分类号： H01L39/24

    CPC分类号： H01L39/2461 ,  C30B29/22

    摘要： Articles are provided including a base substrate having a layer of an oriented cubic oxide material with a rock-salt-like structure layer thereon, and, a layer of epitaxial titanium nitride upon the layer of an oriented cubic oxide material having a rock-salt-like structure. Such articles can further include thin films of high temperature superconductive oxides such as YBCO upon the layer of epitaxial titanium nitride or upon a intermediate buffer layer upon the layer of epitaxial titanium nitride.

    摘要翻译： 提供了一种制品，其包括具有层上的岩盐类结构层的定向立方氧化物材料层的基底基材和在具有岩盐盐结构层的定向立方氧化物材料层上的外延氮化钛层， 像结构。 这样的制品还可以包括在外延氮化钛层上的高温超导氧化物如YBCO的薄膜或在外延氮化钛层上的中间缓冲层上。

    Method for implantation of high dopant concentrations in wide band gap materials
    8.
    发明申请
    Method for implantation of high dopant concentrations in wide band gap materials 失效

    公开(公告)号：US20060286784A1

    公开(公告)日：2006-12-21

    申请号：US11438887

    申请日：2006-05-23

    申请人： Igor Usov ,  Paul Arendt

    发明人： Igor Usov ,  Paul Arendt

    IPC分类号： H01L21/00 ,  H01L21/425

    CPC分类号： H01L21/26546 ,  H01L21/268 ,  H01L21/324

    摘要： A method that combines alternate low/medium ion dose implantation with rapid thermal annealing at relatively low temperatures. At least one dopant is implanted in one of a single crystal and an epitaxial film of the wide band gap compound by a plurality of implantation cycles. The number of implantation cycles is sufficient to implant a predetermined concentration of the dopant in one of the single crystal and the epitaxial film. Each of the implantation cycles includes the steps of: implanting a portion of the predetermined concentration of the one dopant in one of the single crystal and the epitaxial film; annealing one of the single crystal and the epitaxial film and implanted portion at a predetermined temperature for a predetermined time to repair damage to one of the single crystal and the epitaxial film caused by implantation and activates the implanted dopant; and cooling the annealed single crystal and implanted portion to a temperature of less than about 100° C. This combination produces high concentrations of dopants, while minimizing the defect concentration.