发明申请
- 专利标题: High rate buffer layer for IBAD MgO coated conductors
- 专利标题(中): 用于IBAD MgO涂层导体的高速缓冲层
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申请号: US11021800申请日: 2004-12-23
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公开(公告)号: US20060141291A1公开(公告)日: 2006-06-29
- 发明人: Stephen Foltyn , Quanxi Jia , Paul Arendt
- 申请人: Stephen Foltyn , Quanxi Jia , Paul Arendt
- 主分类号: H01L39/24
- IPC分类号: H01L39/24 ; B32B15/04 ; B32B9/00 ; B32B19/00
摘要:
Articles are provided including a base substrate having a layer of an oriented material thereon, and, a layer of hafnium oxide upon the layer of an oriented material. The layer of hafnium oxide can further include a secondary oxide such as cerium oxide, yttrium oxide, lanthanum oxide, scandium oxide, calcium oxide and magnesium oxide. Such articles can further include thin films of high temperature superconductive oxides such as YBCO upon the layer of hafnium oxide or layer of hafnium oxide and secondary oxide.
公开/授权文献
- US07258927B2 High rate buffer layer for IBAD MgO coated conductors 公开/授权日:2007-08-21
信息查询
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