发明申请
- 专利标题： Method of forming isolation film in semiconductor device
- 专利标题（中）： 在半导体器件中形成隔离膜的方法
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申请号： US11139306申请日： 2005-05-27
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公开(公告)号： US20060141717A1公开(公告)日： 2006-06-29
- 发明人: Young Kim
- 申请人： Young Kim
- 申请人地址： KR Kyoungki-do
- 专利权人： HYNIX SEMICONDUCTOR INC.
- 当前专利权人： HYNIX SEMICONDUCTOR INC.
- 当前专利权人地址： KR Kyoungki-do
- 优先权： KR2004-114181 20041228
- 主分类号： H01L21/76
- IPC分类号： H01L21/76
摘要：
The present invention relates to a method of forming isolation films of a semiconductor device. According to the present invention, an oxidization process is performed to oxidize inner walls of trenches in a pre-heating period where temperature is raised in order to deposit an insulating material within a chamber so as to form isolation films. Thus, a smiling phenomenon can be prevented from being generated at corners of a tunnel oxide film formed in a semiconductor substrate, and top corners of trenches can also be made round. It is thus possible to improve the reliability of a process and electrical characteristics of the device.
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