发明申请
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
-
申请号: US11311268申请日: 2005-12-20
-
公开(公告)号: US20060145228A1公开(公告)日: 2006-07-06
- 发明人: Masaru Kito , Ryota Katsumata , Hideaki Aochi , Nobutoshi Aoki , Masaki Kondo , Sanae Ito
- 申请人: Masaru Kito , Ryota Katsumata , Hideaki Aochi , Nobutoshi Aoki , Masaki Kondo , Sanae Ito
- 优先权: JP2005-001883 20050106
- 主分类号: H01L29/94
- IPC分类号: H01L29/94
摘要:
A semiconductor memory device comprising a semiconductor substrate, element isolating regions formed on the semiconductor substrate, an element forming region provided between the element isolating regions on the semiconductor substrate, the element forming region having a protruding portion, a transistor having a channel formed in the protruding portion of the element forming region, and a capacitor formed in or on the semiconductor substrate to be connected to the transistor, wherein the protruding portion in the element forming region includes first and second inclined and opposed planes arranged along a channel width direction of the transistor, and an upper plane provided between the first and second inclined planes.