Semiconductor device having low parasitic resistance and small junction leakage characteristic

Invention Application

US20060145271A1 Semiconductor device having low parasitic resistance and small junction leakage characteristic 审中-公开

Title translation: 具有低寄生电阻和小结漏电特性的半导体器件

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Patent Title: Semiconductor device having low parasitic resistance and small junction leakage characteristic
Patent Title (中): 具有低寄生电阻和小结漏电特性的半导体器件
Application No.: US11367575

Application Date: 2006-03-06
Publication No.: US20060145271A1

Publication Date: 2006-07-06
Inventor: Takashi Ichimori , Norio Hirashita
Applicant: Takashi Ichimori , Norio Hirashita
Priority: JP2000-296327 20000928
Main IPC: H01L29/76
IPC: H01L29/76

Semiconductor device having low parasitic resistance and small junction leakage characteristic

Abstract:

A semiconductor device includes diffusion layers formed in a SOI layer under a side-wall, a channel formed between the diffusion layers, silicide layers sandwiching the diffusion layers wherein interface junctions between the diffusion layers and the silicide layers are (111) silicon planes.

Abstract(Chinese):

半导体器件包括形成在侧壁下的SOI层中的扩散层，形成在扩散层之间的沟道，夹着扩散层的硅化物层，其中扩散层和硅化物层之间的界面接合为（111）硅平面。

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件