发明申请
- 专利标题： LDMOS transistor
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申请号： US11319481申请日： 2005-12-29
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公开(公告)号： US20060145285A1公开(公告)日： 2006-07-06
- 发明人: Suk Lee
- 申请人： Suk Lee
- 申请人地址： KR Kangnam-Ku
- 专利权人： DONGBU-ANAM SEMICONDUCTOR
- 当前专利权人： DONGBU-ANAM SEMICONDUCTOR
- 当前专利权人地址： KR Kangnam-Ku
- 优先权： KR10-2004-0117144 20041230
- 主分类号： H01L23/58
- IPC分类号： H01L23/58
摘要：
A lateral DMOS transistor having a uniform distribution of channel impurity concentration includes a drift region of a first conductivity; a body of a second conductivity, the body being disposed in the drift region and has a channel thereon; and a source region of the first conductivity, the source region being disposed within the body and having an upper region surrounded by a first impurity region of the first conductivity.
公开/授权文献
- US07569884B2 LDMOS transistor 公开/授权日：2009-08-04
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