公开(公告)号：US09385304B2

公开(公告)日：2016-07-05

申请号：US14203249

申请日：2014-03-10

Applicant: Masahiko Nakayama ,  Tadashi Kai ,  Masaru Toko ,  Hiroaki Yoda ,  Hyung Suk Lee ,  Jae Geun Oh ,  Choon Kun Ryu ,  Min Suk Lee

Inventor： Masahiko Nakayama ,  Tadashi Kai ,  Masaru Toko ,  Hiroaki Yoda ,  Hyung Suk Lee ,  Jae Geun Oh ,  Choon Kun Ryu ,  Min Suk Lee

IPC: H01L27/00 ,  H01L43/02 ,  H01L43/12 ,  H01L45/00 ,  G11C11/56 ,  G11C11/15 ,  G11C11/16 ,  H01L27/22 ,  H01L27/24 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/02 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/5607 ,  H01L27/222 ,  H01L27/228 ,  H01L27/2463 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L45/04

Abstract: According to one embodiment, a magnetic memory is disclosed. The memory includes a conductive layer containing a first metal material, a stacked body above the conductive layer, and including a first magnetization film containing a second metal material, a second magnetization film, and a tunnel barrier layer between the first magnetization film and the second magnetization film, and an insulating layer on a side face of the stacked body, and containing an oxide of the first metal material. The first magnetization film and/or the second magnetization film includes a first region positioned in a central portion, and a second region positioned in an edge portion and containing As, P, Ge, Ga, Sb, In, N, Ar, He, F, Cl, Br, I, Si, B, C, O, Zr, Tb, S, Se, or Ti.

Abstract translation: 根据一个实施例，公开了一种磁存储器。 该存储器包括一个包含第一金属材料的导电层，在该导电层上方的层叠体，并且包括一个第一磁化膜，该第一磁化膜含有第二金属材料，第二磁化膜和第一磁化膜与第二磁化膜之间的隧道势垒层 磁化膜和层叠体的侧面上的绝缘层，并且含有第一金属材料的氧化物。 第一磁化膜和/或第二磁化膜包括位于中心部分的第一区域和位于边缘部分中并且包含As，P，Ge，Ga，Sb，In，N，Ar，He的第二区域， F，Cl，Br，I，Si，B，C，O，Zr，Tb，S，Se或Ti。

公开(公告)号：US20150069558A1

公开(公告)日：2015-03-12

申请号：US14203249

申请日：2014-03-10

Applicant: Masahiko NAKAYAMA ,  Tadashi KAI ,  Masaru TOKO ,  Hiroaki YODA ,  Hyung Suk LEE ,  Jae Geun OH ,  Choon Kun RYU ,  Min Suk LEE

Inventor： Masahiko NAKAYAMA ,  Tadashi KAI ,  Masaru TOKO ,  Hiroaki YODA ,  Hyung Suk LEE ,  Jae Geun OH ,  Choon Kun RYU ,  Min Suk LEE

IPC: H01L43/02 ,  H01L43/12

CPC classification number: H01L43/02 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/5607 ,  H01L27/222 ,  H01L27/228 ,  H01L27/2463 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L45/04

Abstract: According to one embodiment, a magnetic memory is disclosed. The memory includes a conductive layer containing a first metal material, a stacked body above the conductive layer, and including a first magnetization film containing a second metal material, a second magnetization film, and a tunnel barrier layer between the first magnetization film and the second magnetization film, and an insulating layer on a side face of the stacked body, and containing an oxide of the first metal material. The first magnetization film and/or the second magnetization film includes a first region positioned in a central portion, and a second region positioned in an edge portion and containing As, P, Ge, Ga, Sb, In, N, Ar, He, F, Cl, Br, I, Si, B, C, O, Zr, Tb, S, Se, or Ti.

Abstract translation: 根据一个实施例，公开了一种磁存储器。 该存储器包括一个包含第一金属材料的导电层，在该导电层上方的层叠体，并且包括一个第一磁化膜，该第一磁化膜含有第二金属材料，第二磁化膜和第一磁化膜与第二磁化膜之间的隧道势垒层 磁化膜和层叠体的侧面上的绝缘层，并且含有第一金属材料的氧化物。 第一磁化膜和/或第二磁化膜包括位于中心部分的第一区域和位于边缘部分中并且包含As，P，Ge，Ga，Sb，In，N，Ar，He的第二区域， F，Cl，Br，I，Si，B，C，O，Zr，Tb，S，Se或Ti。

公开(公告)号：US10894071B2

公开(公告)日：2021-01-19

申请号：US12609516

申请日：2009-10-30

Applicant: Min-Young Kim ,  Jong Cheon Hahm ,  Byung Young Park ,  Eun Kyu Park ,  Hee Suk Lee

Inventor： Min-Young Kim ,  Jong Cheon Hahm ,  Byung Young Park ,  Eun Kyu Park ,  Hee Suk Lee

IPC: A61K36/53

Abstract: The present application describes an ethyl acetate fraction of Melissa leaf having excellent angiogenesis and MMP inhibitory activities, and a composition comprising the same.

公开(公告)号：US10359830B2

公开(公告)日：2019-07-23

申请号：US13323257

申请日：2011-12-12

Applicant: Young-Joon Lee ,  Won-Suk Lee ,  Hyun-Woo Jang

Inventor： Young-Joon Lee ,  Won-Suk Lee ,  Hyun-Woo Jang

IPC: G06F3/042 ,  G06F1/3234 ,  G06F1/3296

Abstract: Disclosed are an optical touch input device which divisionally adjusts optical output of a light emitting unit before and during a touch operation to reduce power consumption, and a driving method thereof, the optical touch input device includes a display panel, a plurality of infrared light emitting elements disposed on two adjacent sides of the display panel, a lens unit disposed on the remaining two adjacent sides of the display panel and reflecting light emitted from the infrared light emitting elements, a light receiving unit disposed on the two adjacent sides of the display panel, and a touch control unit including a touch coordinate calculation unit to calculate a set of coordinates of a touch point and a light emission control unit to divide optical outputs of the infrared light emitting elements into optical output during touch and optical output during non-touch and to lower the optical output during non-touch.

公开(公告)号：US10141084B2

公开(公告)日：2018-11-27

申请号：US13834349

申请日：2013-03-15

Applicant: Kyoung Soo Park ,  Woo Suk Lee ,  Woo Jun Lim ,  Kyung Jin Lee ,  Bong Yong Kim ,  Jin Seong Park ,  Dong Seon Uh ,  Youn Jo Ko ,  Jang Hyun Cho ,  Sang Sik Bae ,  Jin Kyu Kim

Inventor： Kyoung Soo Park ,  Woo Suk Lee ,  Woo Jun Lim ,  Kyung Jin Lee ,  Bong Yong Kim ,  Jin Seong Park ,  Dong Seon Uh ,  Youn Jo Ko ,  Jang Hyun Cho ,  Sang Sik Bae ,  Jin Kyu Kim

IPC: H01L23/52 ,  H01B3/08 ,  H01B7/00 ,  H01B13/00 ,  H01L23/00 ,  C09J133/06 ,  C09J7/10 ,  C08K3/08

Abstract: An anisotropic conductive film, the anisotropic conductive film including an insulating layer and a conductive layer laminated on the insulating layer, the conductive layer containing conductive particles, wherein after glass substrates are positioned to face each other on the upper and lower surface of the anisotropic conductive film and are pressed against the anisotropic conductive film at 3 MPa (based on the sample area) and 160° C. (based on the detection temperature of the anisotropic conductive film) for 5 sec, a ratio of the area of the insulating layer to that of the conductive layer is from about 1.3:1 to about 3.0:1.

公开(公告)号：US10058583B2

公开(公告)日：2018-08-28

申请号：US14007095

申请日：2012-03-29

Applicant: Doo Suk Lee ,  Dong Sik Kim ,  Seon Hee Kim

Inventor： Doo Suk Lee ,  Dong Sik Kim ,  Seon Hee Kim

IPC: A61K36/9066 ,  A61K36/77 ,  A61K36/8988 ,  A61K36/537 ,  A61K36/88 ,  A61K45/06

CPC classification number: A61K36/9066 ,  A61K36/537 ,  A61K36/77 ,  A61K36/88 ,  A61K36/8988 ,  A61K45/06 ,  A61K2300/00

Abstract: The present invention relates to a composition for preventing or treating neurological diseases including an extract of Euphoria longan fruit, red sage and Gastrodia elata as an active ingredient. The composition of the present disclosure has a superior effect of inhibiting the activity of acetylcholinesterase (AChE), which hydrolyzes the neurotransmitter acetylcholine directly involved in impairment of cognitive function. In addition, the composition of the present disclosure is safe for the human body since the biologically safe extract of Euphoria longan fruit, red sage and Gastrodia elata is used as the active ingredient.

公开(公告)号：US20180122822A1

公开(公告)日：2018-05-03

申请号：US15610923

申请日：2017-06-01

Applicant: Joon-Suk LEE ,  Hong-Suk KIM ,  Jae-Young AHN ,  Han-Jin LIM

Inventor： Joon-Suk LEE ,  Hong-Suk KIM ,  Jae-Young AHN ,  Han-Jin LIM

IPC: H01L27/11582 ,  H01L27/1157 ,  H01L29/10

CPC classification number: H01L27/11582 ,  H01L27/1157 ,  H01L29/1045 ,  H01L29/66666 ,  H01L29/7827

Abstract: A vertical memory device includes a first structure having a lower semiconductor pattern structure filling a recess on a substrate and protruding from an upper surface of the substrate in a first direction substantially perpendicular to the upper surface of the substrate, the lower semiconductor pattern structure including a first undoped semiconductor pattern, a doped semiconductor pattern, and a second undoped semiconductor pattern sequentially stacked, and a lower surface of the doped semiconductor pattern being lower than the upper surface of the substrate, and an upper semiconductor pattern extending in the first direction on the lower semiconductor pattern structure, and a plurality of gate electrodes surrounding a sidewall of the first structure, the plurality of gate electrodes being at a plurality of levels, respectively, so as to be spaced apart from each other in the first direction.

公开(公告)号：US09727409B2

公开(公告)日：2017-08-08

申请号：US14739534

申请日：2015-06-15

Applicant: Sang-Hoon Shin ,  Hae-Suk Lee ,  Han-Vit Jung ,  Kyo-Min Sohn

Inventor： Sang-Hoon Shin ,  Hae-Suk Lee ,  Han-Vit Jung ,  Kyo-Min Sohn

IPC: G06F11/00 ,  G06F11/07 ,  G06F11/14 ,  G06F11/16 ,  G06F11/18 ,  G06F11/20

CPC classification number: G06F11/0793 ,  G06F11/0703 ,  G06F11/0796 ,  G06F11/142 ,  G06F11/1423 ,  G06F11/1616 ,  G06F11/18 ,  G06F11/2002 ,  G06F11/2017

Abstract: A device, system, and/or method includes an internal circuit configured to perform at least one function, an input-output terminal set and a repair circuit. The input-output terminal set includes a plurality of normal input-output terminals connected to an external device via a plurality of normal signal paths and at least one repair input-output terminal selectively connected to the external device via at least one repair signal path. The repair circuit repairs at least one failed signal path included in the normal signal paths based on a mode signal and fail information signal, where the mode signal represents whether to use the repair signal path and the fail information signal represents fail information on the normal signal paths. Using the repair circuit, various systems adopting different repair schemes may be repaired and cost of designing and manufacturing the various systems may be reduced.

公开(公告)号：US09514768B2

公开(公告)日：2016-12-06

申请号：US13198914

申请日：2011-08-05

Applicant: Jong-hoon Jeong ,  Chul-woo Lee ,  Nam-suk Lee ,  Sang-hoon Lee

Inventor： Jong-hoon Jeong ,  Chul-woo Lee ,  Nam-suk Lee ,  Sang-hoon Lee

IPC: G10L19/00 ,  G10L25/78 ,  G10L19/008 ,  G10L19/24

CPC classification number: G10L25/78 ,  G10L19/008 ,  G10L19/24

Abstract: An audio reproducing method for quickly and correctly extracting extra data, including: receiving a data stream including the extra data including an end marker disposed immediately before main data and data length information, which is length information of the extra data, disposed immediately before the end marker; checking the presence/absence of the end marker; and if the end marker exists, extracting the extra data by using the data length information.

Abstract translation: 一种用于快速且正确地提取额外数据的音频再现方法，包括：接收包括紧邻主数据之前设置的结束标记的附加数据的数据流和作为紧邻结束之前设置的额外数据的长度信息的数据长度信息 标记 检查结束标记的存在/不存在; 并且如果存在结束标记，则通过使用数据长度信息来提取额外的数据。

公开(公告)号：US20160241306A1

公开(公告)日：2016-08-18

申请号：US15017949

申请日：2016-02-08

Applicant: Byeong-Taek MOON ,  Jae-Suk LEE ,  Il-Jong SONG ,  Young-Ki LEE ,  Yo-Han JANG

Inventor： Byeong-Taek MOON ,  Jae-Suk LEE ,  Il-Jong SONG ,  Young-Ki LEE ,  Yo-Han JANG

IPC: H04B5/00 ,  H01Q7/00 ,  H01Q1/27 ,  H01Q1/22

CPC classification number: H01Q1/273 ,  H01Q1/2208 ,  H01Q7/00 ,  H04B5/0075

Abstract: In one embodiment, the antenna arrangement includes a primary antenna having a conductive sidewall; and a loop antenna disposed in and physically separated from the primary antenna. The loop antenna includes a first conductive loop and a capacitor electrically connected between ends of the first conductive loop.

Abstract translation: 在一个实施例中，天线装置包括具有导电侧壁的主天线; 以及设置在主天线中并在物理上与主天线分离的环形天线。 环形天线包括第一导电回路和电连接在第一导电回路的端部之间的电容器。