发明申请
- 专利标题： Novel wafer repair method using direct-writing
- 专利标题（中）： 使用直写的新型晶圆修复方法
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申请号： US11029992申请日： 2005-01-05
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公开(公告)号： US20060148109A1公开(公告)日： 2006-07-06
- 发明人: Chin-Hsiang Lin , Burn Lin , Tsai-Sheng Gau
- 申请人： Chin-Hsiang Lin , Burn Lin , Tsai-Sheng Gau
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; G06K9/00
摘要：
A method of wafer repairing comprises identifying locations and patterns of defective regions in a semiconductor wafer; communicating the locations and patterns of defective regions to a direct-writing tool; forming a photoresist layer on the semiconductor wafer; locally exposing the photoresist layer within the defective regions using an energy beam; developing the photoresist layer on the semiconductor wafer; and wafer-processing the semiconductor wafer under the photoresist layer after exposing and developing.
公开/授权文献
- US07307001B2 Wafer repair method using direct-writing 公开/授权日：2007-12-11
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