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    SILICONE-ORGANIC ELASTOMER GELS
    4.
    发明申请
    SILICONE-ORGANIC ELASTOMER GELS 有权
    有机有机弹性体凝胶

    公开(公告)号：US20100183525A1

    公开(公告)日：2010-07-22

    申请号：US12293600

    申请日：2007-03-20

    Applicant: Shaow Burn Lin

    Inventor： Shaow Burn Lin

    IPC: A61K8/89 ,  A61Q17/04

    CPC classification number: C08L83/04 ,  A61K8/042 ,  A61K8/31 ,  A61K8/37 ,  A61K8/585 ,  A61K8/671 ,  A61K8/895 ,  A61Q17/04 ,  A61Q19/00 ,  C08G77/045 ,  C08G77/12 ,  C08G77/20 ,  C08G77/46 ,  C08G77/50 ,  C08L83/06 ,  C08L83/12 ,  C08L83/00

    Abstract: Gel compositions are disclosed containing a silicone organic elastomer from the reaction of an organohydrogen-siloxane having at least two SiH containing cyclosiloxane rings in its molecule, a compound or mixture of compounds having at least two aliphatic unsaturated groups in its molecule, and a hydrosilylation catalyst. The silicone elastomer reaction product may itself be a gelled composition, or optionally may be contained in a carrier fluid to form a gel. The gel compositions may further contain a personal or healthcare active.

    Abstract translation: 公开了由分子中具有至少两个含有SiH的环硅氧烷环的有机氢硅氧烷，其分子中具有至少两个脂族不饱和基团的化合物或化合物的混合物与氢化硅烷化催化剂的反应产生的有机硅有机弹性体的凝胶组合物 。 硅氧烷弹性体反应产物本身可以是胶凝的组合物，或任选地可以包含在载体流体中以形成凝胶。 凝胶组合物还可以包含个人或保健活性物质。

    Silicone Vesicles
    5.
    发明申请
    Silicone Vesicles 失效
    硅胶囊

    公开(公告)号：US20090171012A1

    公开(公告)日：2009-07-02

    申请号：US12339154

    申请日：2008-12-19

    Applicant: Shaow Burn Lin

    Inventor： Shaow Burn Lin

    IPC: C08L83/06

    CPC classification number: B01J13/02 ,  A61K8/11 ,  A61K8/14 ,  A61K8/671 ,  A61K8/894 ,  A61K2800/412 ,  A61Q19/00 ,  C11D3/373

    Abstract: A process for preparing a vesicle composition based upon mixing an organopolysiloxane having at least one hydrophilic substituent group, a water miscible solvent, and water is disclosed. The vesicle compositions produced by the method are useful in various personal, household, and health care applications.

    Abstract translation: 公开了一种基于混合具有至少一个亲水性取代基的有机聚硅氧烷，水混溶性溶剂和水来制备囊泡组合物的方法。 通过该方法生产的囊泡组合物可用于各种个人，家庭和医疗保健应用。

    Wafer edge cleaning process
    6.
    发明申请
    Wafer edge cleaning process 审中-公开
    晶圆边缘清洗工艺

    公开(公告)号：US20070093067A1

    公开(公告)日：2007-04-26

    申请号：US11256711

    申请日：2005-10-24

    Applicant: Ching-Yu Chang ,  Burn Lin

    Inventor： Ching-Yu Chang ,  Burn Lin

    IPC: H01L21/302 ,  H01L21/461

    CPC classification number: H01L21/67046 ,  H01L21/67051 ,  H01L21/6708

    Abstract: A method of processing a semiconductor wafer can be used prior to an immersion lithography process. The method includes providing a layer of organic photoresist onto a surface of the semiconductor wafer and removing a portion of the photoresist from an outer edge of the wafer using an edge-bead removal process. The outer edge of the wafer is then cleaned using one or more processes, including a mechanical scrubber/cleaner, mega-sonic power, de-ionized water and/or chemical solution.

    Abstract translation: 在浸没光刻工艺之前可以使用半导体晶片的处理方法。 该方法包括在半导体晶片的表面上提供一层有机光致抗蚀剂，并使用边缘珠去除工艺从晶片的外边缘去除一部分光致抗蚀剂。 然后使用一个或多个工艺（包括机械洗涤器/清洁器，超声功率，去离子水和/或化学溶液）清洁晶片的外边缘。

    Layout generation and optimization to improve photolithographic performance
    7.
    发明申请
    Layout generation and optimization to improve photolithographic performance 有权

    公开(公告)号：US20070028206A1

    公开(公告)日：2007-02-01

    申请号：US11193133

    申请日：2005-07-29

    Applicant: Shou-Yen Chou ,  Jaw-Jung Shin ,  Tsai-Sheng Gau ,  Burn Lin

    Inventor： Shou-Yen Chou ,  Jaw-Jung Shin ,  Tsai-Sheng Gau ,  Burn Lin

    IPC: G06F17/50

    CPC classification number: G03F1/36

    Abstract: Disclosed are a system and method for designing a mask layout. In one example, the method includes representing the mask layout using a plurality of pixels, each having a mask transmittance coefficient. A control parameter is initialized and a representative of the mask layout is generated. The method determines acceptance of the representative of the mask layout by a cost function and a Boltzmann factor, where the cost function is related to the mask layout and a target substrate pattern, and the Boltzmann factor is related to the cost function and the control parameter. The methods repeats the steps of generating the representative and determining acceptance until the mask layout is stabilized. The control parameter is decreased according to an annealing schedule. The generating, determining, repeating, and decreasing steps are reiterated until the mask layout is optimized.

    System and method for manufacturing a mask for semiconductor processing
    9.
    发明申请
    System and method for manufacturing a mask for semiconductor processing 有权
    用于制造半导体处理用掩模的系统和方法

    公开(公告)号：US20060246357A1

    公开(公告)日：2006-11-02

    申请号：US11115433

    申请日：2005-04-27

    Applicant: Chia-Jen Chen ,  Hsin-Chang Lee ,  Sheng-Chi Chin ,  Hung Hsieh ,  Burn Lin

    Inventor： Chia-Jen Chen ,  Hsin-Chang Lee ,  Sheng-Chi Chin ,  Hung Hsieh ,  Burn Lin

    IPC: G03C5/00 ,  G03F1/00

    CPC classification number: G03F7/38

    Abstract: The present disclosure provides a system and method for manufacturing a mask for semiconductor processing. In one example, the system includes at least one exposure unit configured to select a recipe for a later baking process in a post treatment unit, a buffer unit coupled to the exposure unit and configured to move the mask substrate from the exposure unit to the post treatment unit without exposing the mask substrate to the environment; and the post treatment unit coupled to the buffer unit and the exposure unit and configured to perform a baking process on the mask substrate using baking parameters associated with the recipe selected by the exposure unit.

    Abstract translation: 本公开提供了一种用于制造用于半导体处理的掩模的系统和方法。 在一个示例中，系统包括至少一个曝光单元，其被配置为在后处理单元中选择用于稍后烘焙处理的配方，缓冲单元，其耦合到曝光单元并且被配置为将掩模基板从曝光单元移动到柱 处理单元，而不将掩模基板暴露于环境中; 以及所述后处理单元，其耦合到所述缓冲单元和所述曝光单元，并且被配置为使用与由所述曝光单元选择的所述配方相关联的烘焙参数对所述掩模基板进行烘烤处理。

    Process control method
    10.
    发明申请
    Process control method 有权
    过程控制方法

    公开(公告)号：US20060196960A1

    公开(公告)日：2006-09-07

    申请号：US11027412

    申请日：2004-12-30

    Applicant: Shing-Sheng Yu ,  Chih-Ming Ke ,  Burn Lin

    Inventor： Shing-Sheng Yu ,  Chih-Ming Ke ,  Burn Lin

    IPC: F24D1/00

    CPC classification number: G05D23/24 ,  G05D23/1934

    Abstract: A methodology for doing process control by using a heating apparatus comprising heating zones is revealed. First, a target CD (critical dimension) map is assigned. A baseline CD map corresponding to a substrate processed with the heating apparatus at a baseline setting is also obtained. An original CD map corresponding to a substrate processed at an original setting is obtained. For each heating zone, a perturbed CD map corresponding to a substrate processed at a perturbed setting is also obtained. The temperature distribution of the heating apparatus is adjusted according to the error CD map defined by the baseline CD map and the target CD map, basis functions defined by the original CD map and perturbed CD maps, and expansion coefficients expanding the error CD map with basis functions.

    Abstract translation: 揭示了通过使用包括加热区域的加热装置进行过程控制的方法。 首先，分配目标CD（关键尺寸）图。 还获得了对应于在加热装置处理的基板在基线设置处的基线CD图。 获得与以原始设置处理的基板对应的原始CD图。 对于每个加热区域，也获得对应于在扰动设置处理的基板的扰动的CD图。 根据由基准CD映射和目标CD映射定义的误差CD映射，由原始CD映射和扰动CD映射定义的基函数以及扩展系数扩展错误CD映射的基础来调节加热设备的温度分布 功能。

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