发明申请
US20060148143A1 METHOD OF CREATING A Ge-RICH CHANNEL LAYER FOR HIGH-PERFORMANCE CMOS CIRCUITS
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为高性能CMOS电路创建Ge-RICH通道层的方法
- 专利标题： METHOD OF CREATING A Ge-RICH CHANNEL LAYER FOR HIGH-PERFORMANCE CMOS CIRCUITS
- 专利标题（中）： 为高性能CMOS电路创建Ge-RICH通道层的方法
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申请号： US10905477申请日： 2005-01-06
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公开(公告)号： US20060148143A1公开(公告)日： 2006-07-06
- 发明人: Stephen Bedell , Bruce Doris , Devendra Sadana
- 申请人： Stephen Bedell , Bruce Doris , Devendra Sadana
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/84
- IPC分类号： H01L21/84 ; H01L21/00 ; H01L21/20
摘要：
A method of forming a surface Ge-containing channel which can be used to fabricate a Ge-based field effect transistor (FET) which can be applied to semiconductor-on-insulator substrates (SOIs) is provided. The disclosed method uses Ge-containing ion beams, such as cluster ion beams, to create a strained Ge-containing rich region at or near a surface of a SOI substrate. The Ge-containing rich region can be present continuously across the entire surface of the semiconductor substrate, or it can be present as a discrete region at a predetermined surface portion of the semiconductor substrate.
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