A fabricating method of a semiconductor device includes: forming a first metal layer on a substrate and patterning the first metal layer to form a bottom metal line and a bottom electrode of a capacitor; forming an interlayer insulating layer on the resulting structure; forming a via hole in the interlayer insulating layer and forming a contact; etching the interlayer insulating layer to form a trench exposing the bottom electrode; forming a dielectric layer on the resulting structure, and removing the dielectric layer formed outside the trench; and forming a second metal layer on the resulting structure to form a top metal line and a top electrode of the capacitor.