Invention Application
US20060150893A1 Substrate for forming magnetic garnet single-crystal film, process for producing the same, optical device and process for producing the same
审中-公开
用于形成磁性石榴石单晶膜的基板，其制造方法，光学装置及其制造方法
- Patent Title: Substrate for forming magnetic garnet single-crystal film, process for producing the same, optical device and process for producing the same
- Patent Title (中): 用于形成磁性石榴石单晶膜的基板，其制造方法，光学装置及其制造方法
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Application No.: US10544099Application Date: 2004-01-28
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Publication No.: US20060150893A1Publication Date: 2006-07-13
- Inventor: Kiyoshi Uchida , Yukio Sakashita , Atsushi Ohido
- Applicant: Kiyoshi Uchida , Yukio Sakashita , Atsushi Ohido
- Priority: JP2003-027165 20030402
- International Application: PCT/JP04/00760 WO 20040128
- Main IPC: C30B15/00
- IPC: C30B15/00 ; C30B21/06 ; C30B27/02 ; C30B28/10 ; C30B30/04
Abstract:
A method of producing a magnetic garnet single crystal film formation substrate 2 for growing a magnetic garnet single crystal film by liquid phase epitaxial growth is provided. First, a base substrate 10 composed of a garnet-based single crystal being unstable with a flux used for the liquid phase epitaxial growth is formed. Next, a buffer layer 11 composed of a garnet-based single crystal thin film formed at least on a crystal growing surface of said base substrate 10 and being stable with the flux is formed. When forming the buffer layer 11 on the base substrate 10, it is formed by a thin film formation method, such as sputtering, without heating the substrate 10 in a positive manner.
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