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    Substrate for forming magnetic garnet single-crystal film, process for producing the same, optical device and process for producing the same
    1.
    发明申请
    Substrate for forming magnetic garnet single-crystal film, process for producing the same, optical device and process for producing the same 审中-公开
    用于形成磁性石榴石单晶膜的基板，其制造方法，光学装置及其制造方法

    公开(公告)号：US20060150893A1

    公开(公告)日：2006-07-13

    申请号：US10544099

    申请日：2004-01-28

    申请人： Kiyoshi Uchida ,  Yukio Sakashita ,  Atsushi Ohido

    发明人： Kiyoshi Uchida ,  Yukio Sakashita ,  Atsushi Ohido

    IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

    CPC分类号： C30B19/12 ,  C30B23/025 ,  C30B29/28

    摘要： A method of producing a magnetic garnet single crystal film formation substrate 2 for growing a magnetic garnet single crystal film by liquid phase epitaxial growth is provided. First, a base substrate 10 composed of a garnet-based single crystal being unstable with a flux used for the liquid phase epitaxial growth is formed. Next, a buffer layer 11 composed of a garnet-based single crystal thin film formed at least on a crystal growing surface of said base substrate 10 and being stable with the flux is formed. When forming the buffer layer 11 on the base substrate 10, it is formed by a thin film formation method, such as sputtering, without heating the substrate 10 in a positive manner.

    摘要翻译： 提供一种通过液相外延生长生产磁性石榴石单晶膜的磁性石榴石单晶成膜基板2的制造方法。 首先，形成由用于液相外延生长的焊剂不稳定的石榴石类单晶构成的基底基板10。 接下来，形成由至少在所述基底基板10的晶体生长面上形成且与焊剂稳定的基于石榴石的单晶薄膜构成的缓冲层11。 当在基底基板10上形成缓冲层11时，通过诸如溅射的薄膜形成方法形成，而不以积极的方式加热基板10。

    Magnetic garnet single crystal film formation substrate, optical element and production method of the same
    2.
    发明申请
    Magnetic garnet single crystal film formation substrate, optical element and production method of the same 审中-公开
    磁石榴石单晶成膜基片，光学元件及其制作方法相同

    公开(公告)号：US20060112873A1

    公开(公告)日：2006-06-01

    申请号：US10543655

    申请日：2004-01-28

    申请人： Kiyoshi Uchida ,  Yukio Sakashita ,  Atsushi Ohido

    发明人： Kiyoshi Uchida ,  Yukio Sakashita ,  Atsushi Ohido

    IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

    CPC分类号： H01F41/28 ,  C30B19/02 ,  C30B29/28 ,  G02F1/0036 ,  H01F10/24

    摘要： A magnetic garnet single crystal film formation substrate 2 for growing a thick magnetic garnet single crystal film, wherein crystal defects, warps, cracks and flaking, etc. are not caused, by liquid phase epitaxial growth is provided. The substrate 2 comprises a base substrate 10 composed of a garnet-based single crystal being unstable with a flux used for the liquid phase epitaxial growth; a buffer layer 11a composed of a garnet-based single crystal thin film formed on a crystal growing surface 10a of said base substrate 10 and being stable with said flux; and a protective layer 11b formed at least on side surfaces 10b of said base substrate 10 crossing with said crystal growing surface of said base substrate 10 and being stable with said flux. By using the substrate, a high quality magnetic garnet single crystal film can be produced. The magnetic garnet single crystal film is used as an optical element, such as a Faraday element, used for an optical isolator, optical circulator and magneto-optical sensor, etc.

    摘要翻译： 提供用于生长厚的石榴石单晶膜的磁性石榴石单晶膜形成基板2，其中通过液相外延生长不会引起晶体缺陷，翘曲，裂纹和剥落等。 基板2包括由用于液相外延生长的焊剂不稳定的基于石榴石的单晶构成的基底基板10; 由形成在所述基底基板10的结晶生长面10a上并与所述焊剂稳定的基于石榴石的单晶薄膜构成的缓冲层11a; 以及至少在所述基底基板10的与所述基底基板10的所述晶体生长面交叉的侧面10b上形成的保护层11b，并且与所述焊剂稳定。 通过使用基板，可以制造高品质的石榴石单晶膜。 磁性石榴石单晶膜用作用于光隔离器，光循环器和磁光传感器等的法拉第元件的光学元件。

    Interior tire power generation apparatus and tire monitoring system using the same
    3.
    发明授权
    Interior tire power generation apparatus and tire monitoring system using the same 有权
    内胎发电装置及使用其的轮胎监视系统

    公开(公告)号：US08525658B2

    公开(公告)日：2013-09-03

    申请号：US12891582

    申请日：2010-09-27

    申请人： Yasutoshi Hirabayashi ,  Yukio Sakashita

    发明人： Yasutoshi Hirabayashi ,  Yukio Sakashita

    IPC分类号： B60C23/00 ,  G08B21/00 ,  H01L41/00 ,  H02N2/00

    CPC分类号： B60C23/0411 ,  B60C23/0493 ,  H01L41/113 ,  H01L41/183 ,  H01L41/1878

    摘要： An interior tire power generation apparatus includes a piezoelectric section having an inorganic piezoelectric body of a perovskite type oxide represented by General Formula (PX) below; a pair of electrodes for extracting an electric charge generated in the piezoelectric section when strained by an external force exerted on the tire; and an energy storage unit for storing the extracted electric charge. (Bix, A1-x) (By, C1-y)O3   (PX) where, A is an A-site element, other than Pb, with an average ionic valence of 2, B is a B-site element with an average ionic valence of 3, C is a B-site element with an average ionic valence of greater than 3, and each of A, B, and C is one or a plurality of types of metal elements. O is oxygen. B and C are of different compositions. 0.6≦x≦1.0, x-0.2≦y≦x.

    摘要翻译： 一种内胎发电装置，具有压电部件，具有由下述通式（PX）表示的钙钛矿型氧化物的无机压电体; 一对电极，用于当由于施加在轮胎上的外力而产生的压电部分产生的电荷; 以及用于存储所提取的电荷的能量存储单元。 （Bix，A1-x）（By-C1-y）O3（PX）其中，A是除Pb以外的平均离子价为2的A位元素，B是具有平均值的B位元素 离子价为3，C为平均离子价大于3的B位元素，A，B和C分别为一种或多种金属元素。 O是氧气。 B和C具有不同的组成。 0.6 @ x @ 1.0，x-0.2 @ y @ x。

    Piezoelectric device, piezoelectric actuator having the same, liquid discharge apparatus, and power generating apparatus
    5.
    发明授权
    Piezoelectric device, piezoelectric actuator having the same, liquid discharge apparatus, and power generating apparatus 有权
    压电元件，具有该压电元件的压电致动器，液体排出装置和发电装置

    公开(公告)号：US08405285B2

    公开(公告)日：2013-03-26

    申请号：US12795096

    申请日：2010-06-07

    申请人： Hiroyuki Kobayashi ,  Yukio Sakashita

    发明人： Hiroyuki Kobayashi ,  Yukio Sakashita

    IPC分类号： H01L41/187

    CPC分类号： B41J2/14233 ,  B41J2202/03 ,  H01L41/0973 ,  H01L41/1136 ,  H01L41/1878

    摘要： A piezoelectric device which includes a piezoelectric body having piezoelectricity and a pair of electrodes for applying an electric field to the piezoelectric body in a predetermined direction in which a piezoelectric strain constant d33 (pm/V) and a relative pemittivity ε33 of the piezoelectric body satisfy Formulae (1) and (2) below. This makes the piezoelectric device excellent both in transmission and reception capabilities and appropriate for use as a piezoelectric actuator, a sensor, an ultrasonic sensor, or a power generating device. 100 12√ε33  (2).

    摘要翻译： 一种压电装置，包括具有压电性的压电体和一对电极，用于沿压电体的预定方向向压电体施加电场，其中压电应变常数d33（pm / V）和相对介电常数等于压电 身体满足下面的公式（1）和（2）。 这使得压电装置在发送和接收能力方面均优异并且适合用作压电致动器，传感器，超声波传感器或发电装置。 100 <33（1500）（1）d33（pm / V）>12√e（33）（2）。

    Perovskite-oxide laminates, and piezoelectric devices, and liquid discharge devices containing the same
    8.
    发明授权
    Perovskite-oxide laminates, and piezoelectric devices, and liquid discharge devices containing the same 有权
    钙钛矿型氧化物层叠体及压电元件，以及含有它们的液体排出装置

    公开(公告)号：US07872402B2

    公开(公告)日：2011-01-18

    申请号：US12243701

    申请日：2008-10-01

    申请人： Hiroyuki Kobayashi ,  Yukio Sakashita ,  Tsutomu Sasaki

    发明人： Hiroyuki Kobayashi ,  Yukio Sakashita ,  Tsutomu Sasaki

    IPC分类号： H01L41/187

    CPC分类号： B41J2/14233 ,  B41J2002/14258 ,  B41J2202/03 ,  H01L41/0805 ,  H01L41/0815 ,  H01L41/0973 ,  H01L41/1878

    摘要： A perovskite-oxide lamination constituted by a substrate and one or tore first films of a first oxide of a perovskite type and one or more second films of a second oxide which are alternately formed over the substrate. The first oxide has a composition expressed as ABO3, the second oxide has a composition expressed as CDO3, each of A and C represents one or more A-site elements which are one or more metal elements, each of B and D represents one or more B-site elements which are one or more metal elements, O represents oxygen, and the second oxide is unable to be formed to have a perovskite crystal structure at normal pressure without a thickness limitation. The one or more first films and the one or more second films may contain inevitable impurities.

    摘要翻译： 一种钙钛矿氧化物层叠体，由基板和交替形成在基板上的第一氧化钙钙钛矿型氧化物和一种或多种第二氧化物膜的第一膜或第一膜构成。 第一氧化物具有表示为ABO 3的组成，第二氧化物具有表示为CDO 3的组成，A和C各自表示作为一种或多种金属元素的一个或多个A位元素，B和D各自表示一个或多个 作为一种或多种金属元素的B位元素，O表示氧，并且第二氧化物不能形成为在常压下具有钙钛矿晶体结构而没有厚度限制。 一个或多个第一膜和一个或多个第二膜可能含有不可避免的杂质。

    Multi-layered unit including electrode and dielectric layer
    10.
    发明授权
    Multi-layered unit including electrode and dielectric layer 有权
    多层单元包括电极和电介质层

    公开(公告)号：US06958900B2

    公开(公告)日：2005-10-25

    申请号：US10375923

    申请日：2003-02-26

    申请人： Yukio Sakashita

    发明人： Yukio Sakashita

    IPC分类号： C30B25/18 ,  C30B29/32 ,  H01L21/02 ,  H01L21/316 ,  H01G4/228

    CPC分类号： H01L28/56 ,  C30B25/18 ,  C30B29/32 ,  H01L21/31691 ,  H01L28/65 ,  Y10T428/12493 ,  Y10T428/12535

    摘要： A multi-layered unit according to the present invention includes a support substrate formed of fused quartz, an electrode layer formed on the support substrate and formed of a conductive material, a buffer layer formed on the electrode layer and formed of a dielectric material containing a bismuth layer structured compound having a composition represented by Bi4Ti3O12 and having an excellent orientation characteristic so that the bismuth layer structured compound is oriented in the c axis direction, and a dielectric layer formed on the buffer layer and formed of a dielectric material containing a bismuth layer structured compound having a composition represented by SrBi4Ti4O15 and having an excellent orientation characteristic so that the bismuth layer structured compound is oriented in the c axis direction. Since the thus constituted multi-layered unit includes the dielectric layer containing the bismuth layer structured compound oriented in the c axis direction, in the case of, for example, providing an upper electrode on the dielectric layer to form a thin film capacitor and applying a voltage between the electrode layer and the upper electrode, the direction of the electric field substantially coincides with the c axis of the bismuth layer structured compound contained in the dielectric layer. As a result, since the ferroelectric property of the bismuth layer structured compound contained in the dielectric layer can be suppressed and the paraelectric property thereof can be fully exhibited, it is possible to fabricate a thin film capacitor having a small size, large capacitance and an excellent dielectric characteristic.

    摘要翻译： 根据本发明的多层单元包括由熔融石英形成的支撑基板，形成在支撑基板上并由导电材料形成的电极层，形成在电极层上并由介电材料形成的缓冲层，该介电材料包含 具有由Bi 4 Ti 3 O 12 12表示的组成的铋层结构化合物，并且具有优异的取向特性，使得铋层结构化合物为 在c轴方向上取向，并且形成在缓冲层上并由包含具有由SrBi 4 Ti 4 Si表示的组成的铋层结构化合物的电介质材料形成的电介质层 并且具有优异的取向特性，使得铋层结构化合物在c轴方向上取向。 由于如此构成的多层单元包括在c轴方向上包含铋层结构化合物的电介质层，所以在例如在电介质层上设置上电极以形成薄膜电容器并施加 电极层与上部电极之间的电压，电场方向基本上与包含在电介质层中的铋层结构化合物的c轴重合。 结果，由于可以抑制包含在电介质层中的铋层结构化合物的铁电性能并且可以充分发挥其顺电特性，所以可以制造具有小尺寸，大电容的薄膜电容器和 优良的介电特性。