发明申请
- 专利标题： Tunneling magneto-resistive spin valve sensor with novel composite free layer
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申请号： US11034113申请日： 2005-01-12
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公开(公告)号： US20060153978A1公开(公告)日： 2006-07-13
- 发明人: Tong Zhao , Hui-Chuan Wang , Chyu-Jiuh Torng
- 申请人： Tong Zhao , Hui-Chuan Wang , Chyu-Jiuh Torng
- 专利权人： Headway Technologies, Inc.
- 当前专利权人： Headway Technologies, Inc.
- 主分类号： B05D5/12
- IPC分类号： B05D5/12 ; B05D7/00
摘要：
The conventional free layer in a TMR read head has been replaced by a composite of two or more magnetic layers, one of which is iron rich The result is an improved device that has a higher MR ratio than prior art devices, while still maintaining free layer softness and acceptable magnetostriction. A process for manufacturing the device is also described.
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