发明申请
US20060154472A1 Etching method, program, computer readable storage medium and plasma processing apparatus
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蚀刻方法，程序，计算机可读存储介质和等离子体处理装置
- 专利标题： Etching method, program, computer readable storage medium and plasma processing apparatus
- 专利标题（中）： 蚀刻方法，程序，计算机可读存储介质和等离子体处理装置
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申请号： US11330336申请日： 2006-01-12
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公开(公告)号： US20060154472A1公开(公告)日： 2006-07-13
- 发明人: Akihiro Kikuchi , Yuichiro Sakamoto , Takashi Tsunoda
- 申请人： Akihiro Kikuchi , Yuichiro Sakamoto , Takashi Tsunoda
- 申请人地址： JP Minato-ku
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Minato-ku
- 优先权： JP2005-006332 20050113
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763 ; H01L21/302
摘要：
A difference in etching rate between the coated silicon based insulating film and any of other kinds of silicon-based insulating films is reduced by using nitrogen gas as a part of the etching gas. Therefore, the underlying film may not be exposed to the etching gas for a long time, so that degradation or deterioration of the underlying film can be prevented.
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