发明申请
- 专利标题： Method for manufacturing an integrated circuit using a capping layer having a degree of reflectivity
- 专利标题（中）： 使用具有反射率的封盖层制造集成电路的方法
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申请号： US11034791申请日： 2005-01-13
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公开(公告)号： US20060154475A1公开(公告)日： 2006-07-13
- 发明人: Manoj Mehrotra , Amitabh Jain
- 申请人： Manoj Mehrotra , Amitabh Jain
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments, Inc.
- 当前专利权人： Texas Instruments, Inc.
- 当前专利权人地址： US TX Dallas
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763 ; H01L21/324
摘要：
The present invention provides a method for manufacturing a semiconductor device and a method for manufacturing an integrated circuit. The method for manufacturing the semiconductor device, among other steps, includes forming a capping layer (210) over a transistor device having source/drain regions (150, 155) located over a substrate (110), the capping layer (210) having a degree of reflectivity, and annealing the transistor device through the capping layer (210) using photons (310), the annealing of the transistor device affected by the degree of reflectivity.
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