In one embodiment, a method of removing a low-k layer at a low cost and a method of recycling a wafer using the same, is described. A fluoride treatment is performed on the low-k layer formed on an object using an aqueous hydrogen fluoride solution, and the low-k layer is removed from the object. The Si—O bond in the low-k layer is broken due to an aqueous hydrogen fluoride solution, so that the low-k layer is easily removed from the wafer. Accordingly, the wafer may be recycled at a low cost, thereby improving manufacturing productivity of a semiconductor.