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15 条记录 (耗时 0.032 秒)

    Method of removing a low-k layer and method of recycling a wafer using the same
    1.
    发明申请
    Method of removing a low-k layer and method of recycling a wafer using the same 审中-公开
    去除低k层的方法和使用该层的回收晶片的方法

    公开(公告)号：US20060154484A1

    公开(公告)日：2006-07-13

    申请号：US11330803

    申请日：2006-01-11

    申请人： Dong-Won Hwang ,  Yang-Koo Lee ,  Dong-Chul Heo ,  Pil-Kwon Jun ,  Kwang-Shin Lim ,  Sang-Eon Lee

    发明人： Dong-Won Hwang ,  Yang-Koo Lee ,  Dong-Chul Heo ,  Pil-Kwon Jun ,  Kwang-Shin Lim ,  Sang-Eon Lee

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/31133 ,  H01L21/31053

    摘要： In one embodiment, a method of removing a low-k layer at a low cost and a method of recycling a wafer using the same, is described. A fluoride treatment is performed on the low-k layer formed on an object using an aqueous hydrogen fluoride solution, and the low-k layer is removed from the object. The Si—O bond in the low-k layer is broken due to an aqueous hydrogen fluoride solution, so that the low-k layer is easily removed from the wafer. Accordingly, the wafer may be recycled at a low cost, thereby improving manufacturing productivity of a semiconductor.

    摘要翻译： 在一个实施例中，描述了以低成本去除低k层的方法以及使用其降低晶片的方法。 使用氟化氢水溶液对形成在物体上的低k层进行氟化处理，从物体除去低k层。 低k层中的Si-O键由于氟化氢水溶液而破裂，使得低k层容易从晶片上去除。 因此，可以以低成本回收晶片，从而提高半导体的制造生产率。

    Apparatus for manufacturing integrated circuit device
    6.
    发明授权
    Apparatus for manufacturing integrated circuit device 失效
    集成电路器件制造装置

    公开(公告)号：US06905570B2

    公开(公告)日：2005-06-14

    申请号：US10627565

    申请日：2003-07-24

    申请人： Kwang-Shin Lim ,  Pil-Kwon Jun ,  Hun-Jung Yi ,  Sang-Oh Park ,  Yong-Kyun Ko

    发明人： Kwang-Shin Lim ,  Pil-Kwon Jun ,  Hun-Jung Yi ,  Sang-Oh Park ,  Yong-Kyun Ko

    IPC分类号： B65G49/04 ,  B65G49/07 ,  H01L21/304 ,  H01L21/673 ,  H01L21/677 ,  H01L21/687 ,  B08B7/02 ,  H01L21/22

    CPC分类号： H01L21/67313 ,  H01L21/67326 ,  H01L21/68707

    摘要： An apparatus includes a chamber for containing a fluid, a guide seated in the chamber, and a transfer robot for loading and/or unloading a plurality of wafers to and/or from the guide. The wafers are located on the guide. The guide has a supporting member for supporting a wafer and a stopper member for preventing the wafer from being inclined over a predetermined range. The stopper member is in contact with a wafer edge disposed at a higher position than a wafer edge supported by the supporting member. A wafer guide has a stopper member to prevent adjacent wafers from being inclined and coming in contact with each other. Therefore, it is possible to suppress a poor drying such as water spots (or watermarks) produced when wafers are adhered to each other in a drying process.

    摘要翻译： 一种装置包括用于容纳流体的腔室，位于腔室中的导向器和用于将多个晶片装载和/或从该引导件卸载的传送机器人。 晶片位于导轨上。 引导件具有用于支撑晶片的支撑构件和用于防止晶片倾斜超过预定范围的止动构件。 止动构件与设置在比由支撑构件支撑的晶片边缘更高的位置处的晶片边缘接触。 晶片引导件具有阻止相邻晶片倾斜并彼此接触的止动件。 因此，可以抑制在干燥过程中晶片彼此粘附时产生的水斑（或水印）等干燥不良。

    Methods of manufacturing a semiconductor device using compositions for etching copper
    7.
    发明授权
    Methods of manufacturing a semiconductor device using compositions for etching copper 有权
    使用用于蚀刻铜的组合物制造半导体器件的方法

    公开(公告)号：US07951653B1

    公开(公告)日：2011-05-31

    申请号：US12948331

    申请日：2010-11-17

    申请人： Jung-Dae Park ,  Da-Hee Lee ,  Seung-Ki Chae ,  Pil-Kwon Jun ,  Kwang-Shin Lim

    发明人： Jung-Dae Park ,  Da-Hee Lee ,  Seung-Ki Chae ,  Pil-Kwon Jun ,  Kwang-Shin Lim

    IPC分类号： H01L21/00

    CPC分类号： H01L21/32134 ,  H01L23/5258 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： A method of manufacturing a semiconductor device includes preparing a substrate on which a fuze line containing copper is formed. The method further includes cutting the fuze line by emitting a laser beam, and applying a composition for etching copper to the substrate to finely etch a cutting area of the fuze line and to substantially remove at least one of a copper residue and a copper oxide residue remaining near the cutting area. The composition for etching copper includes about 0.01 to about 10 percent by weight of an organic acid, about 0.01 to 1.0 percent by weight of an oxidizing agent, and a protic solvent.

    摘要翻译： 制造半导体器件的方法包括制备其上形成有铜的引线的衬底。 该方法还包括通过发射激光束切割引信线，以及将用于蚀刻铜的组合物施加到基底上，以精细蚀刻引信线的切割区域并基本上除去铜残留物和氧化铜残留物中的至少一种 保留在切割区附近。 用于蚀刻铜的组合物包括约0.01至约10重量％的有机酸，约0.01至1.0重量％的氧化剂和质子溶剂。

    METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE USING COMPOSITIONS FOR ETCHING COPPER
    8.
    发明申请
    METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE USING COMPOSITIONS FOR ETCHING COPPER 有权
    使用组合物制造半导体器件以蚀刻铜的方法

    公开(公告)号：US20110130000A1

    公开(公告)日：2011-06-02

    申请号：US12948331

    申请日：2010-11-17

    申请人： Jung-Dae PARK ,  Da-Hee Lee ,  Seung-Ki Chae ,  Pil-Kwon Jun ,  Kwang-Shin Lim

    发明人： Jung-Dae PARK ,  Da-Hee Lee ,  Seung-Ki Chae ,  Pil-Kwon Jun ,  Kwang-Shin Lim

    IPC分类号： H01L21/60

    CPC分类号： H01L21/32134 ,  H01L23/5258 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： A method of manufacturing a semiconductor device includes preparing a substrate on which a fuze line containing copper is formed. The method further includes cutting the fuze line by emitting a laser beam, and applying a composition for etching copper to the substrate to finely etch a cutting area of the fuze line and to substantially remove at least one of a copper residue and a copper oxide residue remaining near the cutting area. The composition for etching copper includes about 0.01 to about 10 percent by weight of an organic acid, about 0.01 to 1.0 percent by weight of an oxidizing agent, and a protic solvent.

    摘要翻译： 制造半导体器件的方法包括制备其上形成有铜的引线的衬底。 该方法还包括通过发射激光束切割引信线，以及将用于蚀刻铜的组合物施加到基底上，以精细蚀刻引信线的切割区域并基本上除去铜残留物和氧化铜残留物中的至少一种 保留在切割区附近。 用于蚀刻铜的组合物包括约0.01至约10重量％的有机酸，约0.01至1.0重量％的氧化剂和质子溶剂。

    Etching solution for silicon oxide method of manufacturing a semiconductor device using the same
    9.
    发明授权
    Etching solution for silicon oxide method of manufacturing a semiconductor device using the same 失效
    用于制造使用其的半导体器件的氧化硅蚀刻方法

    公开(公告)号：US07351667B2

    公开(公告)日：2008-04-01

    申请号：US11580937

    申请日：2006-10-16

    申请人： Dong-Won Hwang ,  Hun-Jung Yi ,  Kwang-Shin Lim ,  Jung-Dae Park

    发明人： Dong-Won Hwang ,  Hun-Jung Yi ,  Kwang-Shin Lim ,  Jung-Dae Park

    IPC分类号： H01L21/469

    CPC分类号： H01L27/10855 ,  H01L21/31111 ,  H01L21/76816

    摘要： An etching solution for silicon oxide may be used in a process for enlarging an opening formed through a silicon oxide layer. The etching solution includes about 0.2 to about 5.0 percent by weight of a hydrogen fluoride solution, about 0.05 to about 20.0 percent by weight of an ammonium fluoride solution, about 40.0 to about 70.0 percent by weight of an alkyl hydroxide solution and remaining water. The etching solution may etch the silicon oxide layer without damage to a metal silicide layer exposed by the opening.

    摘要翻译： 在用于扩大通过氧化硅层形成的开口的工艺中可以使用用于氧化硅的蚀刻溶液。 蚀刻溶液包含约0.2至约5.0重量％的氟化氢溶液，约0.05至约20.0重量％的氟化铵溶液，约40.0至约70.0重量％的烷基氢氧化物溶液和剩余的水。 蚀刻溶液可以蚀刻氧化硅层而不损坏由开口暴露的金属硅化物层。