发明申请
- 专利标题: Plasma processing apparatus and a plasma processing method
- 专利标题(中): 等离子体处理装置和等离子体处理方法
-
申请号: US11348300申请日: 2006-02-07
-
公开(公告)号: US20060157449A1公开(公告)日: 2006-07-20
- 发明人: Kazue Takahashi , Toshio Masuda , Tetsunori Kaji , Ken'etsu Yokogawa
- 申请人: Kazue Takahashi , Toshio Masuda , Tetsunori Kaji , Ken'etsu Yokogawa
- 优先权: JP10-289696 19981012
- 主分类号: G01L21/30
- IPC分类号: G01L21/30 ; C23F1/00
摘要:
In an oxide film etching process, a plasma having a suitable ratio of CF3, CF2, CF, and F is necessary, and there is a problem in that the etching characteristic fluctuates in accordance with a temperature fluctuation of the etching chamber. Using a UHF type ECR plasma etching apparatus having a low electron temperature, a suitable dissociation can be obtained, and by maintaining the temperature of a side wall of the etching chamber in a range from 10° C. and 120° C., a stable etching characteristic can be obtained. Since oxide film etching using a low electron temperature and a high density plasma can be obtained, an etching result having a superior characteristic can be obtained, and, also, since the side wall temperature adjustment range is low, a simplified apparatus structure and a heat resistant performance countermeasure can be obtained easily.