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公开(公告)号：US20090008363A1
公开(公告)日：2009-01-08
申请号：US12230565
申请日：2008-09-02
IPC分类号： C23F1/02
CPC分类号： H01J37/32522 , H01J37/32192 , H01J37/32678 , H01L21/31116
摘要： In an oxide film etching process, a plasma having a suitable ratio of CF3, CF2, CF, and F is necessary, and there is a problem in that the etching characteristic fluctuates in accordance with a temperature fluctuation of the etching chamber. Using a UHF type ECR plasma etching apparatus having a low electron temperature, a suitable dissociation can be obtained, and by maintaining the temperature of a side wall of the etching chamber in a range from 10° C. and 120° C., a stable etching characteristic can be obtained. Since oxide film etching using a low electron temperature and a high density plasma can be obtained, an etching result having a superior characteristic can be obtained, and, also, since the side wall temperature adjustment range is low, a simplified apparatus structure and a heat resistant performance countermeasure can be obtained easily.
摘要翻译： 在氧化膜蚀刻工艺中，需要具有CF 3，CF 2，CF和F的合适比例的等离子体，并且存在腐蚀特性根据蚀刻室的温度波动而波动的问题。 使用具有低电子温度的UHF型ECR等离子体蚀刻装置，可以获得适当的解离，并且通过将蚀刻室的侧壁的温度保持在10℃和120℃的范围内，稳定的 可以获得蚀刻特性。 由于可以获得使用低电子温度和高密度等离子体的氧化膜蚀刻，因此可以获得具有优异特性的蚀刻结果，并且由于侧壁温度调节范围低，因此简化的装置结构和热 可以容易地获得耐性性能对策。
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公开(公告)号：US20060157449A1
公开(公告)日：2006-07-20
申请号：US11348300
申请日：2006-02-07
CPC分类号： H01J37/32522 , H01J37/32192 , H01J37/32678 , H01L21/31116
摘要： In an oxide film etching process, a plasma having a suitable ratio of CF3, CF2, CF, and F is necessary, and there is a problem in that the etching characteristic fluctuates in accordance with a temperature fluctuation of the etching chamber. Using a UHF type ECR plasma etching apparatus having a low electron temperature, a suitable dissociation can be obtained, and by maintaining the temperature of a side wall of the etching chamber in a range from 10° C. and 120° C., a stable etching characteristic can be obtained. Since oxide film etching using a low electron temperature and a high density plasma can be obtained, an etching result having a superior characteristic can be obtained, and, also, since the side wall temperature adjustment range is low, a simplified apparatus structure and a heat resistant performance countermeasure can be obtained easily.
摘要翻译： 在氧化膜蚀刻工艺中，需要具有CF 3 N，CF 2，CF和F的合适比例的等离子体，并且存在的问题是， 特性根据蚀刻室的温度波动而波动。 使用具有低电子温度的UHF型ECR等离子体蚀刻装置，可以获得适当的解离，并且通过将蚀刻室的侧壁的温度保持在10℃和120℃的范围内，稳定的 可以获得蚀刻特性。 由于可以获得使用低电子温度和高密度等离子体的氧化膜蚀刻，因此可以获得具有优异特性的蚀刻结果，并且由于侧壁温度调节范围低，因此简化的装置结构和热 可以容易地获得耐性性能对策。
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公开(公告)号：US07048869B2
公开(公告)日：2006-05-23
申请号：US09414520
申请日：1999-10-08
CPC分类号： H01J37/32522 , H01J37/32192 , H01J37/32678 , H01L21/31116
摘要： In an oxide film etching process, a plasma having a suitable ratio of CF3, CF2, CF, F is necessary, and there is a problem in that the etching characteristic fluctuates with a temperature fluctuation of the etching chamber. Using a UHF type ECR plasma etching apparatus having a low electron temperature, a suitable dissociation can be obtained, and by maintaining the temperature of a side wall from 10° C. and 120° C., a stable etching characteristic can be obtained. Since oxide film etching using a low electron temperature and a high density plasma can be obtained, an etching result having a superior characteristic can be obtained, and, also, since the side wall temperature adjustment range is low, a simplified apparatus structure and a heat resistant performance countermeasure can be obtained easily.
摘要翻译： 在氧化膜蚀刻工艺中，需要具有CF 3，CF 2，CF，F的适当比例的等离子体，并且存在的问题在于，蚀刻特性 随着蚀刻室的温度波动而波动。 使用具有低电子温度的UHF型ECR等离子体蚀刻装置，可以获得适当的解离，并且通过将侧壁的温度保持在10℃和120℃，可以获得稳定的蚀刻特性。 由于可以获得使用低电子温度和高密度等离子体的氧化膜蚀刻，因此可以获得具有优异特性的蚀刻结果，并且由于侧壁温度调节范围低，因此简化的装置结构和热 可以容易地获得耐性性能对策。
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公开(公告)号：US06815365B2
公开(公告)日：2004-11-09
申请号：US09983946
申请日：2001-10-26
IPC分类号： H01L21302
CPC分类号： H01J37/32504 , H01J37/32522 , H01J2237/022 , H01L21/3065 , H01L21/67069 , H01L21/67109 , H01L21/6831
摘要： A plasma etching method for etching a sample within an etching chamber having a sidewall, an exchangeable jacket which is held inside of the sidewall, and a heating mechanism proximate to top end of the exchangeable jacket for generating heat which radiates towards an inside of the etching chamber. The plasma etching method further including a step of evacuating the etching chamber by an evacuation system, a step of supplying an etching gas into the etching chamber, a step of generating a plasma for performing etching of the sample in the etching chamber, and a step of conducting a heating operation by the heating mechanism during an initial stage of the step of generating a plasma.
摘要翻译： 一种用于蚀刻在具有侧壁的蚀刻室内的样品的等离子体蚀刻方法，保持在侧壁内侧的可更换夹套，以及靠近可更换护套顶端的加热机构，用于产生朝向蚀刻内部辐射的热量 房间。 等离子体蚀刻方法还包括通过抽气系统对蚀刻室进行排气的步骤，向蚀刻室供给蚀刻气体的步骤，产生用于在蚀刻室中进行蚀刻的等离子体的工序，以及工序 在产生等离子体的步骤的初始阶段期间通过加热机构进行加热操作。
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公开(公告)号：US06171438B2
公开(公告)日：2001-01-09
申请号：US09227332
申请日：1999-01-08
IPC分类号： C23C1600
CPC分类号： H01J37/32504 , H01J37/32522 , H01J2237/022 , H01L21/3065 , H01L21/67069 , H01L21/67109 , H01L21/6831
摘要： A plasma etching apparatus including a vacuum processing chamber, a plasma generation device, a processing gas supply for supplying processing gas to the processing chamber, an electrode for holding a sample to be processed in the vacuum processing chamber, and an evacuation system for reducing the pressure of the vacuum processing chamber. The processing gas includes at least one kind of gas having a composition for forming a polymerized film by plasma discharge, wherein the processing gas is made plasmatic by plasma discharge in the processing chamber. At least one surface of an inner wall surface of the processing chamber in contact with plasma in the processing chamber and a surface of an internal component part is controlled to a predetermined temperature which is lower than the temperature of the sample to be processed and a strong polymerized film is formed on the inner wall surface of the processing chamber.
摘要翻译： 一种等离子体蚀刻装置，包括真空处理室，等离子体产生装置，用于向处理室供应处理气体的处理气体供应源，用于保持真空处理室中待处理样品的电极和用于减少处理气体的排气系统 真空处理室的压力。 处理气体包括至少一种具有通过等离子体放电形成聚合膜的组成的气体，其中处理气体通过在处理室中的等离子体放电而制成。 与处理室中的等离子体接触的处理室的内壁表面的至少一个表面和内部部件的表面被控制到比待处理样品的温度低的预定温度，并且强 聚合膜形成在处理室的内壁表面上。
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公开(公告)号：US20050236109A1
公开(公告)日：2005-10-27
申请号：US11156477
申请日：2005-06-21
CPC分类号： H01J37/32504 , H01J37/32522 , H01J2237/022
摘要： A plasma processing apparatus includes a vacuum processing chamber, a plasma generating unit having a first power source, a gas supply unit, a lower electrode having a sample table surface for holding a sample in the vacuum processing chamber, and a vacuum pumping unit. The apparatus further includes a plate disposed at a position opposed to the sample table surface, a disc electricity conductor disposed in contact with the plate, a second power source for applying an RF frequency bias power to the disc electricity conductor, and a unit for controlling a temperature of the plate to a predetermined value. The plate is made of silicon or carbon at high purity, and the disc electricity conductor and the plate have a plurality of holes for introducing processing gas from the gas supply unit into the vacuum processing chamber.
摘要翻译： 等离子体处理装置包括真空处理室，具有第一电源的等离子体产生单元，气体供给单元，具有用于将样品保持在真空处理室中的样品台表面的下部电极和真空泵送单元。 该设备还包括设置在与样品台表面相对的位置处的板，与板接触设置的盘导电体，用于向盘导电体施加RF频率偏置功率的第二电源，以及用于控制 板的温度达到预定值。 该板由高纯度的硅或碳制成，盘导电体和板具有多个孔，用于将来自气体供应单元的处理气体引入真空处理室。
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7.发明授权Plasma processing apparatus and plasma processing method in which a part of the processing chamber is formed using a pre-fluorinated material of aluminum 失效等离子体处理装置和等离子体处理方法，其中使用铝的预氟化材料形成处理室的一部分
公开(公告)号：US5895586A
公开(公告)日：1999-04-20
申请号：US737520
申请日：1996-11-12
申请人： Tetsunori Kaji , Saburo Kanai , Satoshi Ito , Ryoji Hamasaki , Tetsuo Ono , Tatehito Usui , Kazue Takahashi , Kazutami Tago
发明人： Tetsunori Kaji , Saburo Kanai , Satoshi Ito , Ryoji Hamasaki , Tetsuo Ono , Tatehito Usui , Kazue Takahashi , Kazutami Tago
CPC分类号： H01J37/32467 , H01J37/32477 , Y10S156/914
摘要： There are provided a plasma processing apparatus and a plasma processing method which are suitable for processing a processed substance using a gas plasma containing fluorine atoms.Structural materials used for a high vacuum processing chamber of a plasma processing apparatus are aluminum, aluminum having an anodic oxide coating processed surface and a material having a film of aluminum oxide or a film having aluminum oxide as a main component. A part or the whole of the inner surfaces of the processing chamber is constructed with a pre-fluorinated material.When plasma processing of a processed substance is performed using a gas plasma containing fluorine atoms in the processing chamber having the pre-fluorinated inner surfaces, time-varying processing characteristic can be suppressed.
摘要翻译： PCT No.PCT / JP95 / 00935 Sec。 371日期：1996年11月12日 102（e）日期1996年11月12日PCT提交1995年5月17日PCT公布。 出版物WO95 / 31822 日期：1995年11月23日提供了适用于使用含有氟原子的气体等离子体处理物质的等离子体处理装置和等离子体处理方法。 用于等离子体处理装置的高真空处理室的结构材料是具有阳极氧化物涂覆处理表面的铝，具有氧化铝膜或具有氧化铝作为主要成分的膜的材料。 处理室的内表面的一部分或全部由预氟化材料构成。 使用具有预氟化内表面的处理室中含有氟原子的气体等离子体进行处理物质的等离子体处理时，可以抑制时变处理特性。
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8.发明授权Etching end point judging method, etching end point judging device, and insulating film etching method using these methods 有权蚀刻终点判定方法，蚀刻终点判定装置以及使用这些方法的绝缘膜蚀刻方法公开(公告)号：US06596551B1
公开(公告)日：2003-07-22
申请号：US09452174
申请日：1999-12-01
申请人： Tatehito Usui , Ken Yoshioka , Shoji Ikuhara , Kouji Nishihata , Kazue Takahashi , Tetsunori Kaji , Shigeru Nakamoto
发明人： Tatehito Usui , Ken Yoshioka , Shoji Ikuhara , Kouji Nishihata , Kazue Takahashi , Tetsunori Kaji , Shigeru Nakamoto
IPC分类号： H01L2166
CPC分类号： H01L21/76805 , H01L21/76807 , H01L21/76808 , H01L21/7681 , H01L21/76897 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： Etching end point judging method that includes the following steps in a dry etching end point judging method having a step of reducing noise of input signal waveforms using first digital filter, a step of obtaining a differential coefficient (primary or secondary) of a signal waveform from differential processing by operation circuit, a step of obtaining a smoothed differential coefficient value by reducing the noise components of the time series differential coefficient waveform that was obtained in the previous step, using the second digital filter, and a step of judging an etching end point by comparing the smoothed differential coefficient value and a preset value using discrimination method.
摘要翻译： 一种蚀刻终点判定方法，其特征在于，在具有使用第一数字滤波器降低输入信号波形的噪声的步骤的干式蚀刻终点判定方法中，具有以下步骤：获得信号波形的微分系数（初级或次级） 通过运算电路的差分处理，通过使用第二数字滤波器减少上一步骤中获得的时间序列差分系数波形的噪声分量来获得平滑的微分系数值的步骤，以及判断蚀刻终点 通过使用判别方法比较平滑的微分系数值和预设值。
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公开(公告)号：US07686917B2
公开(公告)日：2010-03-30
申请号：US11780014
申请日：2007-07-19
申请人： Toshio Masuda , Tatehito Usui , Mitsuru Suehiro , Hiroshi Kanekiyo , Hideyuki Yamamoto , Kazue Takahashi , Hiromichi Enami
发明人： Toshio Masuda , Tatehito Usui , Mitsuru Suehiro , Hiroshi Kanekiyo , Hideyuki Yamamoto , Kazue Takahashi , Hiromichi Enami
CPC分类号： H01L21/67069 , G01N21/68 , H01J37/32082 , H01J37/32935 , H01J37/32972
摘要： A plasma processing apparatus includes a vacuum vessel with a sample stage having a mounting surface disposed in a process chamber, and a plate having substantially uniform thickness and electric power applied thereto constituting a ceiling of the chamber. The plate is disposed opposite to and substantially parallel with the sample stage so as to cover the whole area of the stage mounting surface and has a through-hole therein. An optical transmitter with a diameter larger than a diameter of the though-hole is disposed inside of the vacuum vessel and has an end face at a position above and spaced a small distance a back surface of the plate so as to receive light from the chamber via the through-hole. The optical transmitter is independently detachable with respect to the back surface of the plate.
摘要翻译： 等离子体处理装置包括具有设置在处理室中的安装表面的样品台的真空容器，以及构成室的天花板的基本均匀的厚度和电功率的板。 该板与样品台相对设置并基本上平行，以覆盖舞台安装表面的整个区域并且在其中具有通孔。 直径大于通孔直径的光发射器设置在真空容器的内部，并且具有位于板的后表面上方且间隔很小距离的位置处的端面，以便接收来自腔室的光 通过通孔。 光发射器相对于板的后表面独立地可拆卸。
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10.发明授权公开(公告)号：US07169254B2
公开(公告)日：2007-01-30
申请号：US10732285
申请日：2003-12-11
申请人： Toshio Masuda , Tatehito Usui , Mitsuru Suehiro , Hiroshi Kanekiyo , Hideyuki Yamamoto , Kazue Takahashi , Hiromichi Enami
发明人： Toshio Masuda , Tatehito Usui , Mitsuru Suehiro , Hiroshi Kanekiyo , Hideyuki Yamamoto , Kazue Takahashi , Hiromichi Enami
CPC分类号： H01L21/67069 , G01N21/68 , H01J37/32082 , H01J37/32935 , H01J37/32972
摘要： A plasma processing apparatus having a sample stage disposed inside a vacuum chamber and a plate member disposed opposing to a sample which is placed on the sample stage and supplied with electric power. The sample is processed using a plasma generated between the sample stage and the plate member and a measuring port is disposed at a back side of the plate member. The measuring port includes an optical transmitter which receives light from a surface of the sample, and a seal which vacuum-seals between an atmospheric side and vacuum side of the vacuum chamber.
摘要翻译： 一种等离子体处理装置，其具有设置在真空室内的样品台和与放置在样品台上并提供电力的样品相对设置的板构件。 使用在样品台和板构件之间产生的等离子体处理样品，并且测量端口设置在板构件的后侧。 测量端口包括从样品表面接收光的光发射器，以及在真空室的大气侧和真空侧之间进行真空密封的密封件。
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