- 专利标题: Infrared solid-state image pickup apparatus and a production method thereof
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申请号: US11330259申请日: 2006-01-12
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公开(公告)号: US20060157812A1公开(公告)日: 2006-07-20
- 发明人: Yasuaki Ohta , Masashi Ueno
- 申请人: Yasuaki Ohta , Masashi Ueno
- 申请人地址: JP Chiyoda-ku
- 专利权人: MITSUBISHI DENKI KABUSHIKI KAISHA
- 当前专利权人: MITSUBISHI DENKI KABUSHIKI KAISHA
- 当前专利权人地址: JP Chiyoda-ku
- 优先权: JP2005-007977 20050114
- 主分类号: H01L31/058
- IPC分类号: H01L31/058
摘要:
An infrared solid-state image pickup apparatus includes an SOI substrate having a silicon oxide film layer and an SOI layer on a silicon substrate, a detecting portion which is provided with a PN junction diode formed on the SOI substrate and converts a temperature change generated by an incident infrared ray to an electric signal, and a support that holds the detecting portion with a space from the silicon substrate of the SOI substrate. An impurity in a semiconductor layer constituting the PN junction diode is distributed such that carriers flowing in the semiconductor layer are distributed in such an uneven manner as being much in a central portion of the semiconductor layer than in a peripheral portion thereof.
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