公开(公告)号：US20110210251A1

公开(公告)日：2011-09-01

申请号：US13035173

申请日：2011-02-25

申请人： Takahiro Onakado ,  Masashi Ueno

发明人： Takahiro Onakado ,  Masashi Ueno

IPC分类号： H01L25/00

CPC分类号： H04N5/33 ,  H01L27/14669 ,  H04N5/3651 ,  H04N5/3742

摘要： A thermal infrared solid-state imaging device includes a horizontal scanning circuit for scanning a pixel area horizontally to read an infrared image, and vertical scanning circuits provided at both ends of the pixel area. The vertical scanning circuits drive a drive line by applying a driving voltage at both ends of the drive line (in two-end driving). Further a bias voltage is applied at the end of the pixel area to a bias line connected to differential integrating circuits.

摘要翻译： 热红外固体摄像装置包括：水平扫描电路，用于水平扫描像素区域以读取红外图像;以及垂直扫描电路，设置在像素区域的两端。 垂直扫描电路通过在驱动线的两端施加驱动电压来驱动驱动线（在两端驱动中）。 此外，在像素区域的末端施加偏置电压到连接到差分积分电路的偏置线。

公开(公告)号：US20090194698A1

公开(公告)日：2009-08-06

申请号：US12346126

申请日：2008-12-30

申请人： Takahiro ONAKADO ,  Masashi UENO

发明人： Takahiro ONAKADO ,  Masashi UENO

IPC分类号： G01J5/00

CPC分类号： G01J5/22 ,  G01J1/44 ,  H04N5/33

摘要： A thermal infrared imaging device includes a diode, a power supply for supplying a constant power supply voltage to an anode of the diode through a first interconnection, a voltage setting circuit for setting a voltage across the diode, and a current read circuit which is connected to a cathode of the diode through a second interconnection and the voltage setting circuit, for reading a current of the diode. The voltage setting circuit controls a voltage of a connection point of the second interconnection and the voltage setting circuit to a voltage obtained by subtracting a voltage drop from a predetermined bias voltage. The voltage drop is generated by resistances of the first and second interconnections, and the diode current.

摘要翻译： 热红外成像装置包括：二极管，通过第一互连向二极管的阳极提供恒定的电源电压的电源;用于设置二极管两端的电压的电压设定电路;以及连接的电流读取电路 通过第二互连到二极管的阴极和电压设置电路，用于读取二极管的电流。 电压设定电路将第二配线的连接点和电压设定电路的电压控制为通过从预定的偏置电压减去电压降而获得的电压。 电压降由第一和第二互连电阻和二极管电流产生。

公开(公告)号：US07005644B2

公开(公告)日：2006-02-28

申请号：US10658407

申请日：2003-09-10

申请人： Tomohiro Ishikawa ,  Masashi Ueno

发明人： Tomohiro Ishikawa ,  Masashi Ueno

IPC分类号： G01J1/02

CPC分类号： H01L37/00 ,  G01J5/02 ,  G01J5/023 ,  G01J5/08 ,  G01J5/0853 ,  G01J5/10 ,  H01L27/16

摘要： A thermal infrared detector includes a substrate; a temperature sensor having electrical characteristics changed in accordance with changes in temperature caused by infrared absorption; heat-insulating supporting legs supporting and thermally insulating the temperature sensor and serving as signal lines for reading out electrical signals from the temperature sensor; and an infrared absorption layer in thermal contact the temperature sensor. Each of the temperature sensor, the heat-insulating supporting legs, and the infrared absorption layer is in a different plane and the planes are spatially separated from each other.

摘要翻译： 热红外检测器包括基板; 具有根据红外吸收引起的温度变化而发生电特性变化的温度传感器; 隔热支撑腿支撑和隔热温度传感器并用作用于从温度传感器读出电信号的信号线; 以及与温度传感器热接触的红外吸收层。 温度传感器，绝热支撑腿和红外线吸收层中的每一个处于不同的平面中，并且平面在空间上彼此分离。

公开(公告)号：US06211520B1

公开(公告)日：2001-04-03

申请号：US09593244

申请日：2000-06-14

申请人： Tomohiro Ishikawa ,  Masashi Ueno

发明人： Tomohiro Ishikawa ,  Masashi Ueno

IPC分类号： G01J510

CPC分类号： G01J5/20

摘要： An infrared sensor includes a first infrared sensing element separated by a dielectric layer from on a silicon substrate and thermally isolated from the substrate by a void in the dielectric layer. The sensor has a second temperature sensing element which detects the temperature of the whole sensor. The output difference between the first and second sensor elements is used as gate/source voltage of a MOSFET. The current variation of the MOSFET is read out as a discharge from a capacitor connected to the MOSFET. The noise in the sensor is suppressed, and performance is improved. An infrared sensor array includes the sensors arranged in an array.

摘要翻译： 红外传感器包括由硅衬底上的电介质层分离的第一红外感测元件，并且通过电介质层中的空隙与衬底热隔离。 传感器具有检测整个传感器的温度的第二温度感测元件。 第一和第二传感器元件之间的输出差用作MOSFET的栅/源电压。 MOSFET的电流变化作为从连接到MOSFET的电容器的放电读出。 抑制了传感器的噪音，提高了性能。 红外线传感器阵列包括排列成阵列的传感器。

公开(公告)号：US08502872B2

公开(公告)日：2013-08-06

申请号：US12721249

申请日：2010-03-10

申请人： Masashi Ueno

发明人： Masashi Ueno

IPC分类号： H04N7/18

CPC分类号： G01J1/46 ,  H04N5/33

摘要： A thermal infrared solid-state imaging device includes a pixel array having pixels diodes, a vertical power supply line connected to horizontal drive lines and commonly connecting the horizontal drive lines, integrating circuits for integrating voltages at the ends of the vertical signal lines for a predetermined integration time, and current sources connected to the vertical signal lines at an opposite end to the end of the vertical signal line which is connected to the integrating circuit. The integration time is equally divided substantially into two periods, and during one divided period of the integration time, energization is performed between one end of the vertical power supply line and the current source, and during the other divided period of the integration time, the energization is performed between other end of the vertical power supply line and the current source.

摘要翻译： 一种热红外固体摄像器件，包括具有像素二极管的像素阵列，连接到水平驱动线并且共同连接水平驱动线的垂直电源线，用于将垂直信号线的端部处的电压积分用于预定的 积分时间和与连接到积分电路的垂直信号线的末端相对的垂直信号线连接的电流源。 积分时间基本上等分为两个周期，在积分时间的一个分割周期内，在垂直电源线的一端和电流源之间进行通电，在积分时间的另一个分割周期内， 在垂直电源线的另一端和电流源之间进行通电。

公开(公告)号：US20060157812A1

公开(公告)日：2006-07-20

申请号：US11330259

申请日：2006-01-12

申请人： Yasuaki Ohta ,  Masashi Ueno

发明人： Yasuaki Ohta ,  Masashi Ueno

IPC分类号： H01L31/058

CPC分类号： H01L31/103 ,  G01J5/20 ,  H01L27/14649

摘要： An infrared solid-state image pickup apparatus includes an SOI substrate having a silicon oxide film layer and an SOI layer on a silicon substrate, a detecting portion which is provided with a PN junction diode formed on the SOI substrate and converts a temperature change generated by an incident infrared ray to an electric signal, and a support that holds the detecting portion with a space from the silicon substrate of the SOI substrate. An impurity in a semiconductor layer constituting the PN junction diode is distributed such that carriers flowing in the semiconductor layer are distributed in such an uneven manner as being much in a central portion of the semiconductor layer than in a peripheral portion thereof.

公开(公告)号：US5998816A

公开(公告)日：1999-12-07

申请号：US926974

申请日：1997-09-10

申请人： Yoshiyuki Nakaki ,  Tomohiro Ishikawa ,  Masashi Ueno ,  Hisatoshi Hata ,  Masafumi Kimata

发明人： Yoshiyuki Nakaki ,  Tomohiro Ishikawa ,  Masashi Ueno ,  Hisatoshi Hata ,  Masafumi Kimata

IPC分类号： G01D21/00 ,  B81B3/00 ,  B81C1/00 ,  G01P15/08 ,  H01L21/302 ,  H01L21/3065 ,  H01L37/02 ,  H01L27/20 ,  H01L29/84

CPC分类号： H01L37/02 ,  B81C1/00571 ,  G01P15/0802 ,  B81B2201/0278 ,  B81B2207/015 ,  B81C2201/014 ,  Y10S73/01 ,  Y10S73/04

摘要： A sensor element provided with a silicon substrate having a semiconductor circuit, a sensing-element portion formed on the silicon substrate and connected to the semiconductor circuit, and a cavity portion formed by removing a silicon substrate portion below the sensing-element portion, in which a removal resistance region having resistance against substrate removal is provided in the silicon substrate between the semiconductor circuit and the cavity portion.

摘要翻译： 一种传感器元件，设置有具有半导体电路的硅衬底，形成在硅衬底上并连接到半导体电路的感测元件部分，以及通过去除感测元件部分下方的硅衬底部分形成的空腔部分，其中 在半导体电路和空腔部分之间的硅衬底中提供具有抵抗衬底移除的去除电阻区域。

公开(公告)号：US5640013A

公开(公告)日：1997-06-17

申请号：US543040

申请日：1995-10-13

申请人： Tomohiro Ishikawa ,  Masashi Ueno ,  Osamu Kaneda

发明人： Tomohiro Ishikawa ,  Masashi Ueno ,  Osamu Kaneda

IPC分类号： G01J1/02 ,  H01L27/14 ,  H01L27/146 ,  H01L37/02 ,  H04N5/33 ,  G01J5/20

CPC分类号： H01L27/146

摘要： An infrared sensor includes a substrate, an insulator layer formed on the substrate, and a heat-sensitive semiconductor layer having a temperature dependent electrical resistance with a relatively large temperature coefficient of resistance. In order to improve sensitivity of the heat-sensitive semiconductor layer for detecting infrared rays, high concentration impurity semiconductor regions are positioned on either side of the semiconductor layer to form a semiconductor section. The high concentration impurity semiconductor sections have a higher absorption coefficient of infrared rays than the semiconductor layer. Thus, the semiconductor section itself both detects and absorbs infrared rays with or without providing any heat-absorbing layer. Further, electrodes are connected to each high-concentration impurity layer, which form an ohmic contact therewith.

摘要翻译： 红外线传感器包括基板，形成在基板上的绝缘体层，以及具有温度相对较高的电阻温度系数的热敏半导体层。 为了提高用于检测红外线的热敏半导体层的灵敏度，高浓度杂质半导体区域位于半导体层的任一侧上以形成半导体部分。 高浓度杂质半导体部分的红外线吸收系数比半导体层高。 因此，半导体部分本身也可以检测和吸收具有或不具有任何吸热层的红外线。 此外，电极连接到与其形成欧姆接触的每个高浓度杂质层。

公开(公告)号：US08431900B2

公开(公告)日：2013-04-30

申请号：US13035173

申请日：2011-02-25

申请人： Takahiro Onakado ,  Masashi Ueno

发明人： Takahiro Onakado ,  Masashi Ueno

IPC分类号： G01J5/20

CPC分类号： H04N5/33 ,  H01L27/14669 ,  H04N5/3651 ,  H04N5/3742

摘要： A thermal infrared solid-state imaging device includes a horizontal scanning circuit for scanning a pixel area horizontally to read an infrared image, and vertical scanning circuits provided at both ends of the pixel area. The vertical scanning circuits drive a drive line by applying a driving voltage at both ends of the drive line (in two-end driving). Further a bias voltage is applied at the end of the pixel area to a bias line connected to differential integrating circuits.

摘要翻译： 热红外固体摄像装置包括：水平扫描电路，用于水平扫描像素区域以读取红外图像;以及垂直扫描电路，设置在像素区域的两端。 垂直扫描电路通过在驱动线的两端施加驱动电压来驱动驱动线（两端驱动）。 此外，在像素区域的末端施加偏置电压到连接到差分积分电路的偏置线。

公开(公告)号：US08357900B2

公开(公告)日：2013-01-22

申请号：US12346126

申请日：2008-12-30

申请人： Takahiro Onakado ,  Masashi Ueno

发明人： Takahiro Onakado ,  Masashi Ueno

IPC分类号： G01J5/00

CPC分类号： G01J5/22 ,  G01J1/44 ,  H04N5/33

摘要： A thermal infrared imaging device includes a diode, a power supply for supplying a constant power supply voltage to an anode of the diode through a first interconnection, a voltage setting circuit for setting a voltage across the diode, and a current read circuit which is connected to a cathode of the diode through a second interconnection and the voltage setting circuit, for reading a current of the diode. The voltage setting circuit controls a voltage of a connection point of the second interconnection and the voltage setting circuit to a voltage obtained by subtracting a voltage drop from a predetermined bias voltage. The voltage drop is generated by resistances of the first and second interconnections, and the diode current.

摘要翻译： 热红外成像装置包括：二极管，通过第一互连向二极管的阳极提供恒定的电源电压的电源;用于设置二极管两端的电压的电压设定电路;以及连接的电流读取电路 通过第二互连到二极管的阴极和电压设置电路，用于读取二极管的电流。 电压设定电路将第二配线的连接点和电压设定电路的电压控制为通过从预定的偏置电压减去电压降而获得的电压。 电压降由第一和第二互连电阻和二极管电流产生。