发明申请
- 专利标题： Semiconductor device and method for fabricating the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11189916申请日： 2005-07-27
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公开(公告)号： US20060163638A1公开(公告)日： 2006-07-27
- 发明人: Satoru Ito
- 申请人： Satoru Ito
- 优先权： JP2005-015579 20050124
- 主分类号： H01L29/00
- IPC分类号： H01L29/00 ; H01L21/8242 ; H01L27/108 ; H01L21/44
摘要：
A semiconductor device includes a first insulating film formed on a semiconductor substrate; a second insulating film formed on the first insulating film and having a recess corresponding to a capacitor region; a lower electrode formed in the recess; a capacitor dielectric film formed on the lower electrode; and an upper electrode formed on the capacitor dielectric film. The semiconductor device further includes a conductive portion formed in the first insulating film and the second insulating film for electrically connecting the semiconductor substrate to the upper electrode.
公开/授权文献
- US1214422A Grate. 公开/授权日：1917-01-30
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