A diode-end-pumped ˜812 nm thulium doped solid state laser is disclosed, with improved efficiency and practicality. The inventive laser device include laser active media comprising a thulium doped dielectric solid state gain element, placed within a laser cavity, and diode-end-pumped with ˜780 nm pump radiation. Solid state lasers emitting at a wavelengths of ˜406 nm, ˜270 nm, and ˜203 nm are also disclosed, based on nonlinear wavelength conversion of a ˜812 nm thulium:host solid state laser.