发明申请
US20060165572A1 Method of making MoO2 powders, products made from MoO2 powders, deposition of MoO2 thin films, and methods of using such materials
有权
制备MoO2粉末的方法，由MoO 2粉末制成的产品，MoO 2薄膜的沉积以及使用这种材料的方法
- 专利标题： Method of making MoO2 powders, products made from MoO2 powders, deposition of MoO2 thin films, and methods of using such materials
- 专利标题（中）： 制备MoO2粉末的方法，由MoO 2粉末制成的产品，MoO 2薄膜的沉积以及使用这种材料的方法
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申请号： US11334140申请日： 2006-01-18
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公开(公告)号： US20060165572A1公开(公告)日： 2006-07-27
- 发明人: Lawrence McHugh , Prabhat Kumar , David Meendering , Richard Wu , Gerhard Wotting , Richard Nicholson
- 申请人： Lawrence McHugh , Prabhat Kumar , David Meendering , Richard Wu , Gerhard Wotting , Richard Nicholson
- 优先权： WOPCT/US04/20932 20040629
- 主分类号： C01G39/00
- IPC分类号： C01G39/00
摘要：
The invention relates to high purity MoO2 powder by reduction of ammonium molybdate or molybdenum trioxide using hydrogen as the reducing agent in a rotary or boat furnace. Consolidation of the powder by press/sintering, hot pressing, and/or HIP is used to make discs, slabs, or plates, which are used as sputtering targets. The MoO2 disc, slab, or plate form is sputtered on a substrate using a suitable sputtering method or other physical means to provide a thin film having a desired film thickness. The thin films have properties such as electrical, optical, surface roughness, and uniformity comparable or superior to those of indium-tin oxide (ITO) and zinc-doped ITO in terms of transparency, conductivity, work function, uniformity, and surface roughness. The MoO2 and MoO2 containing thin films can be used in organic light-emitting diodes (OLED), liquid crystal display (LCD), plasma display panel (PDP), field emission display (FED), thin film solar cell, low resistivity ohmic contacts, and other electronic and semiconductor devices.