公开(公告)号：US20060165572A1

公开(公告)日：2006-07-27

申请号：US11334140

申请日：2006-01-18

申请人： Lawrence McHugh ,  Prabhat Kumar ,  David Meendering ,  Richard Wu ,  Gerhard Wotting ,  Richard Nicholson

发明人： Lawrence McHugh ,  Prabhat Kumar ,  David Meendering ,  Richard Wu ,  Gerhard Wotting ,  Richard Nicholson

IPC分类号： C01G39/00

CPC分类号： C01G39/02 ,  C01P2006/10 ,  C01P2006/12 ,  C01P2006/40 ,  H01L51/5206

摘要： The invention relates to high purity MoO2 powder by reduction of ammonium molybdate or molybdenum trioxide using hydrogen as the reducing agent in a rotary or boat furnace. Consolidation of the powder by press/sintering, hot pressing, and/or HIP is used to make discs, slabs, or plates, which are used as sputtering targets. The MoO2 disc, slab, or plate form is sputtered on a substrate using a suitable sputtering method or other physical means to provide a thin film having a desired film thickness. The thin films have properties such as electrical, optical, surface roughness, and uniformity comparable or superior to those of indium-tin oxide (ITO) and zinc-doped ITO in terms of transparency, conductivity, work function, uniformity, and surface roughness. The MoO2 and MoO2 containing thin films can be used in organic light-emitting diodes (OLED), liquid crystal display (LCD), plasma display panel (PDP), field emission display (FED), thin film solar cell, low resistivity ohmic contacts, and other electronic and semiconductor devices.

摘要翻译： 本发明涉及通过在旋转或船式炉中使用氢作为还原剂还原钼酸铵或三氧化钼来制备高纯度MoO 2 N 2粉末。 使用通过压制/烧结，热压和/或HIP将粉末固结制成用作溅射靶的盘，板或板。 使用合适的溅射法或其他物理方法将MoO 2/2/2盘，板或板形式溅射在基板上，以提供具有所需膜厚度的薄膜。 在透明性，导电性，功函数，均匀性和表面粗糙度方面，薄膜具有与铟锡氧化物（ITO）和掺杂锌的ITO相当或优于电，光学，表面粗糙度和均匀性的性质。 含有MoO 2和MoO 2的薄膜可以用于有机发光二极管（OLED），液晶显示器（LCD），等离子体显示面板（PDP） 场致发射显示器（FED），薄膜太阳能电池，低电阻率欧姆接触器等电子和半导体器件。