发明申请
- 专利标题: Optical semiconductor device and its manufacturing method
- 专利标题(中): 光半导体器件及其制造方法
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申请号: US10547404申请日: 2005-01-13
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公开(公告)号: US20060166386A1公开(公告)日: 2006-07-27
- 发明人: Atsushi Yamada , Yasuaki Nagashima , Yoshiharu Shimose , Tomoyuki Kikugawa
- 申请人: Atsushi Yamada , Yasuaki Nagashima , Yoshiharu Shimose , Tomoyuki Kikugawa
- 优先权: JP2004-020180 20040128; JP2004-266963 20040914
- 国际申请: PCT/JP05/00288 WO 20050113
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L33/00 ; H01L29/18
摘要:
An optical semiconductor device (1) has a semiconductor substrate (2) made of InP, an active layer (7) which is formed in parallel with a top surface (2a) of the semiconductor substrate (2) above the semiconductor substrate (2), an n-type first cladding layer (6) made of InGaAsP which is formed under the active layer (7), a p-type second cladding layer (8) made of InP which is formed under the active layer (7), and window regions (4a, 4b) which are formed at least one light-emitting facet of both light-emitting facets of the active layer (7). The window regions are formed between device facets (1a, 1b) from the light-emitting facet. A relationship is established in which, given that a refractive index of the n-type first cladding layer (6) is na, and a refractive index of the p-type second cladding layer (8) is nb, na>nb is obtained that the refractive index na of the n-type first cladding layer (6) is higher than the refractive index nb of the p-type second cladding layer (8), so as to deflect a distribution of electric field strength of a light generated at the active layer (7) toward the n-type first cladding layer (6) side.