发明申请
- 专利标题： Two-transistor tri-state inverter
- 专利标题（中）： 双晶体三态逆变器
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申请号： US11387626申请日： 2006-03-23
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公开(公告)号： US20060166415A1公开(公告)日： 2006-07-27
- 发明人: Themistokles Afentakis , Apostolos Voutsas , Paul Schuele
- 申请人： Themistokles Afentakis , Apostolos Voutsas , Paul Schuele
- 专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人： Sharp Laboratories of America, Inc.
- 主分类号： H01L21/84
- IPC分类号： H01L21/84 ; H01L21/00
摘要：
A two-transistor tri-state inverter is provided, made from a NMOS dual-gate thin-film transistor (DG-TFT) having a top gate, a back gate, and source/drain regions. A PMOS DG-TFT also has a top gate, a back gate, and S/D regions, and the NMOS first S/D region is connected to a PMOS first S/D region. The NMOS top gate is connected to an input signal (Vin), the back gate is connected to a control signal (Vb), the first S/D region supplies an output signal (Vout), and a second S/D region is connected to a reference voltage. The PMOS top gate is connected to the input signal, the back gate is connected to an inverted control signal (−Vb), and a second S/D region is connected to a supply voltage having a higher voltage than the reference voltage.
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