发明申请
US20060169209A1 Substrate processing apparatus, substrate processing method, and storage medium storing program for implementing the method
审中-公开
基板处理装置，基板处理方法以及用于实现该方法的存储介质存储程序
- 专利标题： Substrate processing apparatus, substrate processing method, and storage medium storing program for implementing the method
- 专利标题（中）： 基板处理装置，基板处理方法以及用于实现该方法的存储介质存储程序
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申请号： US11342613申请日： 2006-01-31
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公开(公告)号： US20060169209A1公开(公告)日： 2006-08-03
- 发明人: Shinichi Miyano
- 申请人： Shinichi Miyano
- 申请人地址： JP Minato-ku
- 专利权人： TOKYO ELECTON LIMITED
- 当前专利权人： TOKYO ELECTON LIMITED
- 当前专利权人地址： JP Minato-ku
- 优先权： JP2005-025271 20050201
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; C23C16/00
摘要：
A substrate processing apparatus that enables a plurality of substrates to be subjected to stable plasma processing. A chamber 11 houses a wafer W. The wafer W is subjected to reactive ion etching in the chamber 11. A focus ring 25 has p-type silicon as a parent material thereof. At least part of the focus ring 25 is exposed to an interior of the chamber 11. The focus ring 25 has been subjected to heat treatment at least once.
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