发明申请
- 专利标题: Electron confinement inside magent of ion implanter
- 专利标题(中): 离子注入机内部的电子限制
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申请号: US11272193申请日: 2005-11-10
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公开(公告)号: US20060169911A1公开(公告)日: 2006-08-03
- 发明人: Anthony Renau , Joseph Olson , Shengwu Chang , James Buff
- 申请人: Anthony Renau , Joseph Olson , Shengwu Chang , James Buff
- 申请人地址: US MA Gloucester
- 专利权人: Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人: Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人地址: US MA Gloucester
- 主分类号: H01J1/50
- IPC分类号: H01J1/50
摘要:
A method and apparatus are disclosed for improving space charge neutralization adjacent a magnet of an ion implanter by confining the electrons inside a magnetic region thereof to reduce electron losses and therefore improve the transport efficiency of a low energy beam. A magnetic pole member for a magnet of an ion implanter is provided that includes an outer surface having a plurality of magnetic field concentration members that form magnetic field concentrations adjacent the magnetic pole member. Electrons that encounter this increased magnetic field are repelled back along the same magnetic field line rather than allowed to escape. An analyzer magnet and ion implanter including the magnet pole are also provided so that a method of improving low energy ion beam space charge neutralization in an ion implanter is realized.
公开/授权文献
- US07459692B2 Electron confinement inside magnet of ion implanter 公开/授权日:2008-12-02
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