A semiconductor device including a contact etch stop layer and contact hole formation method for reduced underlying material loss and improved device performance, the method including providing a semiconductor substrate including an active region including a CMOS device, STI structures, and metal silicide regions; forming a fluorine doped amorphous carbon layer over the active region; forming a PMD layer on the fluorine doped amorphous carbon layer; dry etching contact holes in the PMD layer to expose the fluorine doped amorphous carbon layer; and, removing the fluorine doped amorphous carbon layer according to a dry stripping process.