发明申请
US20060170112A1 Semiconductor device and method of manufacturing thereof 有权
半导体装置及其制造方法

Semiconductor device and method of manufacturing thereof
摘要:
A connection method for materializing a high-performance semiconductor system which is small-sized and high dense, is capable to three-dimensionally connecting a plurality of different kinds of semiconductor chips through piercing electrodes with shortest wiring lengths. The connection method enables high-speed operation with low noise, so as to obtain reliable and excellent connection in a short TAT at low costs. In a three-dimensional chip lamination composed of different kinds of semiconductor chips laminated one upon another with an interpose chip being interposed therebetween for connecting the upper and lower semiconductor chips, the semiconductor chips and the interposer chips are polished by grinding or the like at their rear surfaces so as to have thin thickness, holes are formed at rear surface positions corresponding to external electrode parts on the device side (front surface side) so that the holes extend to front surface electrodes, by dry etching or the like, and metal plating films are applied to the side walls of the holes and rear surface side, metal bumps of another semiconductor chip laminated at an upper stage being press-fitted into the holes applied with the metal plating films through deformation and being geometrically calked in the through holes formed in the semiconductor chip so as to electrically connected thereto.
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