Invention Application
- Patent Title: Delay locked loop in semiconductor memory device and method for generating divided clock therein
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Application No.: US11320847Application Date: 2005-12-30
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Publication No.: US20060171497A1Publication Date: 2006-08-03
- Inventor: Kyoung-Nam Kim , Tae-Yun Kim
- Applicant: Kyoung-Nam Kim , Tae-Yun Kim
- Assignee: HYNIX SEMICONDUCTOR INC.
- Current Assignee: HYNIX SEMICONDUCTOR INC.
- Priority: KR2005-0008447 20050131
- Main IPC: H03D3/24
- IPC: H03D3/24

Abstract:
Provided are a delay locked loop (DLL) and a method for generating a divided clock therein. In the DLL, a width of a reference frequency for phase comparison can be changed depending on a magnitude of an operating frequency. In the DLL, a clock buffer receives a clock equal to an external clock and generates an internal clock. An enable clock generator generates a 1-period enable clock or a 2-period enable clock using a command signal generated for performing a predefined operation. The command signal is generated according to an address command signal inputted from an exterior. A clock divider divides the internal clock to generate a divided clock. The divided clock is controlled by the 1-period enable clock or the 2-period enable clock, such that the divided clock is made to be a 1-period based dividing clock or a 2-period based dividing clock.
Public/Granted literature
- US07368964B2 Delay locked loop in semiconductor memory device and method for generating divided clock therein Public/Granted day:2008-05-06
Information query
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