发明申请
- 专利标题： Ferroelectric recording medium and writing method for the same
- 专利标题（中）： 铁电记录介质和写入方法相同
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申请号： US11348485申请日： 2006-02-07
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公开(公告)号： US20060175644A1公开(公告)日： 2006-08-10
- 发明人: Hyoung-soo Ko , Eun-sik Kim , Sung-dong Kim , Ju-hwan Jung , Hong-sik Park , Chul-min Park , Seung-bum Hong
- 申请人： Hyoung-soo Ko , Eun-sik Kim , Sung-dong Kim , Ju-hwan Jung , Hong-sik Park , Chul-min Park , Seung-bum Hong
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 优先权： KR10-2005-0011410 20050207
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.
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