发明申请
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11197593申请日： 2005-08-05
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公开(公告)号： US20060175672A1公开(公告)日： 2006-08-10
- 发明人: Daisuke Matsushita , Koichi Muraoka , Yasushi Nakasaki , Koichi Kato , Takashi Shimizu
- 申请人： Daisuke Matsushita , Koichi Muraoka , Yasushi Nakasaki , Koichi Kato , Takashi Shimizu
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 优先权： JP2005-030586 20050207
- 主分类号： H01L29/94
- IPC分类号： H01L29/94 ; H01L21/8238
摘要：
According to an aspect of the present invention, there is disclosed a semiconductor device comprising a semiconductor substrate, and a gate insulating film of a P-channel MOS transistor, formed on the semiconductor substrate. The gate insulating film has an oxide film (SiO2), and a diffusion preventive film (BN) containing boron and nitrogen atoms.
公开/授权文献
- US07238997B2 Semiconductor device and method of manufacturing the same 公开/授权日：2007-07-03
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