发明申请
US20060176079A1 Input/output circuit of semiconductor memory device and input/output method thereof 有权
半导体存储器件的输入/输出电路及其输入/输出方法

  • 专利标题: Input/output circuit of semiconductor memory device and input/output method thereof
  • 专利标题(中): 半导体存储器件的输入/输出电路及其输入/输出方法
  • 申请号: US11348582
    申请日: 2006-02-06
  • 公开(公告)号: US20060176079A1
    公开(公告)日: 2006-08-10
  • 发明人: Jong-Hyun ChoiYoung-Hun Seo
  • 申请人: Jong-Hyun ChoiYoung-Hun Seo
  • 优先权: KR2005-10659 20050204
  • 主分类号: H03K19/0175
  • IPC分类号: H03K19/0175
Input/output circuit of semiconductor memory device and input/output method thereof
摘要:
An input/output circuit for a semiconductor memory device, including a data output circuit configured to buffer output data in the semiconductor memory device in response to an input/output enable signal to output the buffered output data to an input/output signal line, a data input circuit configured to receive input data from the input/output signal line and buffer the input data to transfer the buffered input data to the semiconductor memory device, and a load controller configured to control a load on the input/output signal line in response to the input/output enable signal.
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