发明申请
US20060177977A1 Method for patterning fins and gates in a FinFET device using trimmed hard-mask capped with imaging layer
审中-公开
FinFET装置中图案形成翅片和栅极的方法，该装置使用带有成像层的修剪硬掩模
- 专利标题： Method for patterning fins and gates in a FinFET device using trimmed hard-mask capped with imaging layer
- 专利标题（中）： FinFET装置中图案形成翅片和栅极的方法，该装置使用带有成像层的修剪硬掩模
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申请号： US11053223申请日： 2005-02-08
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公开(公告)号： US20060177977A1公开(公告)日： 2006-08-10
- 发明人: Philip Chan , Mansun Chan , Xusheng Wu , Chuguang Feng
- 申请人： Philip Chan , Mansun Chan , Xusheng Wu , Chuguang Feng
- 申请人地址： CN Kowloon
- 专利权人： The Hong Kong University of Science and Technology
- 当前专利权人： The Hong Kong University of Science and Technology
- 当前专利权人地址： CN Kowloon
- 主分类号： H01L21/8244
- IPC分类号： H01L21/8244 ; H01L21/336 ; H01L21/331
摘要：
A capped trimming hard-mask patterning process to form ultra-thin structures can include depositing a hard-mask layer over a layer of patterning material, depositing an imaging layer over the hard-mask layer, patterning the imaging layer and the hard-mask layer, selectively trim etching the hard-mask layer to form a pattern hard mask, and removing the portions of the patterning layer using the pattern hard mask formed from the trimmed hard-mask. Thus, the use of thin imaging layer, that has high etch selectivity to the hard-mask layer, allows the use of trim etch techniques without a risk of hard-mask erosion or the aspect ratio pattern collapse. That, in turn, allows for the formation of the ultra-thin pattern with widths less than the widths of the pattern of the imaging layer.
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