发明申请
- 专利标题： Wide wavelength range silicon electroluminescence device
- 专利标题（中）： 宽波长范围的硅电致发光器件
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申请号： US11058505申请日： 2005-02-14
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公开(公告)号： US20060180816A1公开(公告)日： 2006-08-17
- 发明人: Tingkai Li , Wei Gao , Yoshi Ono , Sheng Hsu
- 申请人： Tingkai Li , Wei Gao , Yoshi Ono , Sheng Hsu
- 专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人： Sharp Laboratories of America, Inc.
- 主分类号： H01L29/26
- IPC分类号： H01L29/26
摘要：
A method is provided for forming a Si electroluminescence (EL) device for emitting light at short wavelengths. The method comprises: providing a substrate; forming a first insulator layer overlying the substrate; forming a silicon-rich silicon oxide (SRSO) layer overlying the first insulator layer, embedded with nanocrystalline Si having a size in the range of 0.5 to 5 nm; forming a second insulator layer overlying the SRSO layer; and, forming a top electrode. Typically, the SRSO has a Si richness in the range of 5 to 40%. In one aspect, the SRSO layer is formed using a DC sputtering process. In another aspect, the SRSO formation step includes a rapid thermal annealing (RTA) process subsequent to depositing the SRSO. Likewise, thermal oxidation or plasma oxidation can be performed subsequent to the SRSO layer deposition. The size of Si nanocrystals is decreased in response to above-mentioned deposition, annealing, and oxidation processes.
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