发明申请
- 专利标题: Amorphous high-k thin film and manufacturing method thereof
- 专利标题(中): 非晶高k薄膜及其制造方法
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申请号: US11354013申请日: 2006-02-15
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公开(公告)号: US20060180838A1公开(公告)日: 2006-08-17
- 发明人: Yo-sep Min , Young-jin Cho
- 申请人: Yo-sep Min , Young-jin Cho
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2005-0012442 20050215
- 主分类号: H01L29/94
- IPC分类号: H01L29/94
摘要:
An amorphous high-k thin film for a semiconductor device and a manufacturing method thereof are provided. The amorphous high-k thin film includes Bi, Ti, Al, and O. Since a BTAO based amorphous dielectric thin film is used as a dielectric material of a DRAM capacitor, a dielectric constant is more than 25, and an increase of a leakage current caused in reducing a physical thickness of the dielectric thin film can be prevented. Accordingly, it is very useful for the integration of the semiconductor device.
公开/授权文献
- US07379322B2 Amorphous high-k thin film and manufacturing method thereof 公开/授权日:2008-05-27