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    Chemical vapor deposition method using alcohol for forming metal oxide thin film
    2.
    发明授权
    Chemical vapor deposition method using alcohol for forming metal oxide thin film 有权

    公开(公告)号：US07135207B2

    公开(公告)日：2006-11-14

    申请号：US10355221

    申请日：2003-01-31

    申请人： Yo-sep Min ,  Young-jin Cho ,  Jung-hyun Lee

    发明人： Yo-sep Min ,  Young-jin Cho ,  Jung-hyun Lee

    IPC分类号： C23C16/18

    CPC分类号： C23C16/40 ,  C23C16/45553

    摘要： Provided is a method for fabricating a metal oxide thin film in which a metal oxide generated by a chemical reaction between a first reactant and a second reactant is deposited on the surface of a substrate as a thin film. The method involves introducing a first reactant containing a metal-organic compound into a reaction chamber including a substrate; and introducing a second reactant containing alcohol. Direct oxidation of a substrate or a deposition surface is suppressed by a reactant gas during the deposition process, as it uses alcohol vapor including no radical oxygen as a reactant gas for the deposition of a thin film. Also, since the thin film is deposited by the thermal decomposition, which is caused by the chemical reaction between the alcohol vapor and a precursor, the deposition rate is fast. Particularly, the deposition rate is also fast when a metal-organic complex with β-diketone ligands is used as a precursor. Further, a thin film with low leakage current can be obtained as the metal oxide thin film fabrication method using a chemical vapor deposition or atomic layer deposition method grows a thin film with fine microstructure.

    Amorphous high-k thin film and manufacturing method thereof
    3.
    发明申请
    Amorphous high-k thin film and manufacturing method thereof 失效
    非晶高k薄膜及其制造方法

    公开(公告)号：US20060180838A1

    公开(公告)日：2006-08-17

    申请号：US11354013

    申请日：2006-02-15

    申请人： Yo-sep Min ,  Young-jin Cho

    发明人： Yo-sep Min ,  Young-jin Cho

    IPC分类号： H01L29/94

    CPC分类号： C23C16/40 ,  C23C16/45525 ,  C23C16/45531 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31616 ,  H01L21/31691 ,  H01L28/55

    摘要： An amorphous high-k thin film for a semiconductor device and a manufacturing method thereof are provided. The amorphous high-k thin film includes Bi, Ti, Al, and O. Since a BTAO based amorphous dielectric thin film is used as a dielectric material of a DRAM capacitor, a dielectric constant is more than 25, and an increase of a leakage current caused in reducing a physical thickness of the dielectric thin film can be prevented. Accordingly, it is very useful for the integration of the semiconductor device.

    摘要翻译： 提供了一种用于半导体器件的非晶高k薄膜及其制造方法。 无定形高k薄膜包括Bi，Ti，Al和O.由于使用基于BTAO的非晶介质薄膜作为DRAM电容器的介电材料，介电常数大于25，并且泄漏增加 可以防止在减小电介质薄膜的物理厚度时引起的电流。 因此，对于半导体器件的集成是非常有用的。

    Method of manufacturing a capacitor for semiconductor device
    5.
    发明申请
    Method of manufacturing a capacitor for semiconductor device 审中-公开
    制造用于半导体器件的电容器的方法

    公开(公告)号：US20060289921A1

    公开(公告)日：2006-12-28

    申请号：US11514248

    申请日：2006-09-01

    申请人： Jung-hyun Lee ,  Yo-sep Min ,  Young-jin Cho

    发明人： Jung-hyun Lee ,  Yo-sep Min ,  Young-jin Cho

    IPC分类号： H01L29/94

    CPC分类号： H01L28/56 ,  H01L21/02186 ,  H01L21/02197 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/3141 ,  H01L21/321 ,  H01L27/0629 ,  H01L28/55 ,  H01L28/65

    摘要： A capacitor for use in a semiconductor device, a method of fabricating the capacitor, and an electronic device adopting the capacitor, wherein the capacitor includes upper and lower electrodes, each formed of a platinum group metal; a thin dielectric layer disposed between the upper and lower electrodes; and a buffer layer disposed between the lower electrode and the thin dielectric layer, the buffer layer including a metal oxide of Group 3, 4, or 13. In the capacitor of the present invention, oxidization of the lower electrode may be suppressed, and excellent characteristics of the thin dielectric layer may be maintained.

    摘要翻译： 一种用于半导体器件的电容器，制造该电容器的方法以及采用该电容器的电子器件，其中该电容器包括由铂族金属形成的上下电极; 设置在上电极和下电极之间的薄介电层; 以及设置在下电极和薄电介质层之间的缓冲层，缓冲层包括第3,4或13族的金属氧化物。在本发明的电容器中，可以抑制下电极的氧化，优异的 可以保持薄介电层的特性。

    Method for manufacturing oxide film having high dielectric constant, capacitor having dielectric film formed using the method, and method for manufacturing the same
    7.
    发明授权
    Method for manufacturing oxide film having high dielectric constant, capacitor having dielectric film formed using the method, and method for manufacturing the same 失效
    具有高介电常数的氧化膜的制造方法，使用该方法形成的电介质膜的电容器及其制造方法

    公开(公告)号：US08143660B2

    公开(公告)日：2012-03-27

    申请号：US10797046

    申请日：2004-03-11

    申请人： Jung-hyun Lee ,  Burn-seok Seo ,  Yo-sep Min ,  Young-jin Cho

    发明人： Jung-hyun Lee ,  Burn-seok Seo ,  Yo-sep Min ,  Young-jin Cho

    IPC分类号： H01L27/108

    CPC分类号： H01L21/0228 ,  C23C16/40 ,  C23C16/45525 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/02205 ,  H01L21/02304 ,  H01L21/3142 ,  H01L21/31616 ,  H01L21/31645

    摘要： Provided are a method for manufacturing a high k-dielectric oxide film, a capacitor having a dielectric film formed using the method, and a method for manufacturing the capacitor. A high k-dielectric oxide film is manufactured by (a) loading a semiconductor substrate in an ALD apparatus, (b) depositing a reaction material having a predetermined composition rate of a first element and a second element on the semiconductor substrate, and (c) forming a first high k-dielectric oxide film having the two elements on the semiconductor substrate by oxidizing the reaction material such that the first element and the second element are simultaneously oxidized. In this method, the size of an apparatus is reduced, productivity is enhanced, and manufacturing costs are lowered. Further, the high k-dielectric oxide film exhibits high dielectric constant and low leakage current and trap density. Thus, a capacitor including the high k-dielectric oxide film as a dielectric film also exhibits low leakage current and trap density.

    摘要翻译： 提供一种制造高k电介质氧化膜的方法，具有使用该方法形成的电介质膜的电容器和制造该电容器的方法。 （a）在ALD装置中加载半导体衬底，（b）在半导体衬底上沉积具有第一元素和第二元素的预定组成比的反应材料，制备高k电介质氧化物膜，和（c ）通过氧化反应材料形成具有两个元件的第一高k电介质氧化物膜，以使第一元件和第二元件同时被氧化。 在该方法中，装置的尺寸减小，生产率提高，制造成本降低。 此外，高k电介质氧化膜表现出高的介电常数和低的漏电流和阱密度。 因此，包括作为电介质膜的高k电介质氧化膜的电容器也具有低泄漏电流和阱密度。

    Thin film including multi components and method of forming the same
    8.
    发明授权
    Thin film including multi components and method of forming the same 有权
    薄膜包括多组分及其形成方法

    公开(公告)号：US07709377B2

    公开(公告)日：2010-05-04

    申请号：US11176657

    申请日：2005-07-08

    申请人： Jung-hyun Lee ,  Dae-sig Kim ,  Yo-sep Min ,  Young-jin Cho

    发明人： Jung-hyun Lee ,  Dae-sig Kim ,  Yo-sep Min ,  Young-jin Cho

    IPC分类号： H01L21/469 ,  H01L21/4763

    CPC分类号： C23C16/409 ,  C23C16/308 ,  C23C16/34 ,  C23C16/40 ,  C23C16/45531 ,  C23C16/45542

    摘要： A thin film including multi components and a method of forming the thin film are provided, wherein a method according to an embodiment of the present invention, a substrate is loaded into a reaction chamber. A unit material layer is formed on the substrate. The unit material layer may be formed of a mosaic atomic layer composed of two kinds of precursors containing components constituting the thin film. The inside of the reaction chamber is purged, and the MAL is chemically changed. The method of forming the thin film of the present invention requires fewer steps than a conventional method while retaining the advantages of the conventional method, thereby allowing a superior thin film yield in the present invention than previously obtainable.

    摘要翻译： 提供了包括多组分的薄膜和形成薄膜的方法，其中根据本发明的实施方案的方法将基底装载到反应室中。 在基板上形成单位材料层。 单元材料层可以由包含构成薄膜的成分的两种前体构成的马赛克原子层形成。 反应室的内部被清除，并且MAL被化学地改变。 与传统方法相比，形成本发明的薄膜的方法需要更少的步骤，同时保持了常规方法的优点，从而使本发明的薄膜产率优于先前可获得的。