发明申请
- 专利标题： METHOD AND DRIVER FOR PROGRAMMING PHASE CHANGE MEMORY CELL
- 专利标题（中）： 编程相变记忆细胞的方法与驱动
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申请号： US11401866申请日： 2006-04-12
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公开(公告)号： US20060181931A1公开(公告)日： 2006-08-17
- 发明人: Yong-ho Ha , Beak-hyung Cho , Ji-hye Yi
- 申请人： Yong-ho Ha , Beak-hyung Cho , Ji-hye Yi
- 优先权： KR03-56011 20030813
- 主分类号： G11C16/06
- IPC分类号： G11C16/06
摘要：
In the method of programming a phase change memory cell, having a lower resistive state and a higher resistive state, to the lower resistive state, the memory cell is heated to first temperature. Subsequently, the memory cell is heated to second temperature, which is greater than the first temperature.
公开/授权文献
- US07126847B2 Method and driver for programming phase change memory cell 公开/授权日：2006-10-24
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