发明申请
US20060186086A1 Composition for forming a polymer layer and method of forming a pattern using the same
审中-公开
用于形成聚合物层的组合物和使用其形成图案的方法
- 专利标题： Composition for forming a polymer layer and method of forming a pattern using the same
- 专利标题（中）： 用于形成聚合物层的组合物和使用其形成图案的方法
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申请号： US11353628申请日： 2006-02-13
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公开(公告)号： US20060186086A1公开(公告)日： 2006-08-24
- 发明人: Myungsun Kim , Sangwoong Yoon , Tae-Young Kim , Young-Ho Kim , Seok-Bong Park
- 申请人： Myungsun Kim , Sangwoong Yoon , Tae-Young Kim , Young-Ho Kim , Seok-Bong Park
- 优先权： KR2005-15332 20050224
- 主分类号： C23F1/00
- IPC分类号： C23F1/00 ; C08F8/42 ; B05D5/00 ; C08K3/02 ; B05D1/32
摘要：
A composition for forming a polymer layer and a method of forming a pattern using the same are provided. The composition comprises a polyhydroxystyrene resin, a cross-linking compound including silicon and a solvent. The composition has an organic-inorganic hybrid system. Thus, a polymer layer formed using the composition has improved etching resistance with respect to a photoresist pattern in an etching process.
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