摘要:
A method can be provided of forming a photoresist pattern on a substrate. The method employs a photoresist composition comprising a photosensitive polymer, the photosensitive polymer has a molecular weight in a range of from about 1,000 up to about 100,000 and comprises repeating units having a structural formula: wherein R represents an acid-labile hydrocarbon group having from 1 up to 20 carbon atoms.
摘要:
In a photosensitive resin, a photoresist composition including the photosensitive resin and a method of forming a photoresist pattern using the photoresist composition, the photosensitive resin includes a hydrophobic terminal group having at least five carbon atoms and a blocking group. The photosensitive resin has a weight average molecular weight of from about 6,000 up to about 9,500. The photoresist composition including the photosensitive resin may form a photoresist pattern having a reduced line edge roughness and a fine line width with accuracy.
摘要:
In a photosensitive resin, a photoresist composition including the photosensitive resin and a method of forming a photoresist pattern using the photoresist composition, the photosensitive resin includes a hydrophobic terminal group having at least five carbon atoms and a blocking group. The photosensitive resin has a weight average molecular weight of from about 6,000 up to about 9,500. The photoresist composition including the photosensitive resin may form a photoresist pattern having a reduced line edge roughness and a fine line width with accuracy.
摘要:
A composition for forming a polymer layer and a method of forming a pattern using the same are provided. The composition comprises a polyhydroxystyrene resin, a cross-linking compound including silicon and a solvent. The composition has an organic-inorganic hybrid system. Thus, a polymer layer formed using the composition has improved etching resistance with respect to a photoresist pattern in an etching process.