发明申请
- 专利标题： Semiconductor device, a manufacturing method thereof, and a camera
- 专利标题（中）： 半导体装置及其制造方法以及照相机
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申请号： US11407270申请日： 2006-04-20
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公开(公告)号： US20060186439A1公开(公告)日： 2006-08-24
- 发明人: Hiroshi Tanaka
- 申请人： Hiroshi Tanaka
- 优先权： JP2003-312253 20030904
- 主分类号： H01L27/148
- IPC分类号： H01L27/148 ; H01L21/339
摘要：
A semiconductor device includes a transfer channel for transferring charge generated by photoelectric conversion, an insulating film formed on the transfer channel, and a transfer electrode for applying a transfer voltage to the transfer channel via the insulating film. The insulating film has a first thickness and a second thickness that is thinner than the first thickness. The insulating film has the first thickness below both ends of the transfer electrode in a width direction of the transfer channel that is orthogonal to a charge transfer direction through the transfer channel, and the insulating film has the second thickness on a part including a center of the transfer channel in the width direction.