发明申请
- 专利标题: High-density germanium-on-insulator photodiode array
- 专利标题(中): 高密度锗绝缘体上的光电二极管阵列
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申请号: US11240969申请日: 2005-09-30
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公开(公告)号: US20060194357A1公开(公告)日: 2006-08-31
- 发明人: Sheng Hsu , Jong-Jan Lee , Jer-Shen Maa , Douglas Tweet
- 申请人: Sheng Hsu , Jong-Jan Lee , Jer-Shen Maa , Douglas Tweet
- 专利权人: Sharp Laboratories of America, Inc.
- 当前专利权人: Sharp Laboratories of America, Inc.
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L21/84
摘要:
A high-density Germanium (Ge)-on-Insulator (GOI) photodiode array and corresponding fabrication method are provided. The method includes: forming an array of pixel driver nMOST devices, each device having a gate connected to a row line in a first orientation, a first source/drain (S/D) region, and a second S/D region connected to Vdd; forming a P-I-N Ge diode for each pixel as follows: forming a n+ region; forming an intrinsic Ge region overlying the n+ region; forming a p+ junction in the intrinsic Ge; and, isolating the P-I-N Ge diodes; and, forming an Indium Tin oxide (ITO) column in a second orientation, about orthogonal to the first orientation, overlying the P-I-N Ge diodes.
公开/授权文献
- US07186611B2 High-density germanium-on-insulator photodiode array 公开/授权日:2007-03-06