- 专利标题： Semiconductor memory device and method of testing the same
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申请号： US11349286申请日： 2006-02-06
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公开(公告)号： US20060195742A1公开(公告)日： 2006-08-31
- 发明人: Dae-Hee Jung , Chul-Woo Park , Seung-Young Seo
- 申请人： Dae-Hee Jung , Chul-Woo Park , Seung-Young Seo
- 优先权： KR2005-11525 20050211
- 主分类号： G01R31/28
- IPC分类号： G01R31/28
摘要：
A semiconductor memory device includes at least one first built in self test (BIST) circuit configured to generate test pattern data, and at least one second BIST circuit configured to receive the test pattern data as received test pattern data and compare the received test pattern data to the test pattern data.
公开/授权文献
- US07607055B2 Semiconductor memory device and method of testing the same 公开/授权日：2009-10-20
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