发明申请
US20060198958A1 Methods for producing silicon nitride films by vapor-phase growth
审中-公开
通过气相生长生产氮化硅膜的方法
- 专利标题： Methods for producing silicon nitride films by vapor-phase growth
- 专利标题（中）： 通过气相生长生产氮化硅膜的方法
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申请号： US10553573申请日： 2004-04-08
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公开(公告)号： US20060198958A1公开(公告)日： 2006-09-07
- 发明人: Christian Dussarrat , Jean-Marc Girard , Takako Kimura , Naoki Tamaoki , Yuusuke Sato
- 申请人： Christian Dussarrat , Jean-Marc Girard , Takako Kimura , Naoki Tamaoki , Yuusuke Sato
- 国际申请： PCT/IB04/01346 WO 20040408
- 主分类号： C23C16/34
- IPC分类号： C23C16/34
摘要：
Methods for the production of silicon nitride films by vapor-phase growth. A hydrazine gas and at least one precursor gas are fed into a reaction chamber containing a substrate. The precursor gas is either a trisilylamine gas or a silylhydrazine gas. A silicone nitride film is formed through the reaction of the hydrazine gas and the precursor gas.
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