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公开(公告)号：US20060198958A1
公开(公告)日：2006-09-07
申请号：US10553573
申请日：2004-04-08
IPC分类号： C23C16/34
CPC分类号： H01L21/0217 , C23C16/345 , H01L21/02208 , H01L21/02271 , H01L21/3185
摘要： Methods for the production of silicon nitride films by vapor-phase growth. A hydrazine gas and at least one precursor gas are fed into a reaction chamber containing a substrate. The precursor gas is either a trisilylamine gas or a silylhydrazine gas. A silicone nitride film is formed through the reaction of the hydrazine gas and the precursor gas.
摘要翻译： 通过气相生长生产氮化硅膜的方法。 将肼气体和至少一种前体气体进料到含有底物的反应室中。 前体气体是三甲基胺气体或甲硅烷基肼气体。 通过肼气体和前体气体的反应形成氮化硅膜。
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2.发明授权Methods for producing silicon nitride films and silicon oxynitride films by thermal chemical vapor deposition 有权通过热化学气相沉积制造氮化硅膜和氧氮化硅膜的方法公开(公告)号：US07192626B2
公开(公告)日：2007-03-20
申请号：US10669623
申请日：2003-09-24
IPC分类号： C23C16/34
CPC分类号： H01L21/02271 , C23C16/308 , C23C16/345 , H01L21/0214 , H01L21/0217 , H01L21/02219 , H01L21/3145 , H01L21/3185
摘要： Silicon nitride film is formed on substrate by feeding trisilylamine and ammonia into a CVD reaction chamber that contains a substrate. The ammonia gas/trisilylamine gas flow rate ratio is set to a value of at least about 10 and/or the thermal CVD reaction is run at a temperature no greater than about 600° C. Silicon oxynitride is obtained by introducing an oxygen source gas into the CVD reaction chamber. This method avoids the production of ammonium chloride and/or the incorporation of carbonaceous contaminants which are detrimental to the quality of the deposited film.
摘要翻译： 通过将三甲胺和氨进料到含有基板的CVD反应室中，在基板上形成氮化硅膜。 将氨气/三甲硅烷气体流量比设定为至少约10的值和/或热CVD反应在不高于约600℃的温度下运行。氮氧化硅通过将氧源气体引入 CVD反应室。 该方法避免了氯化铵的生成和/或碳质污染物的结合，这对沉积膜的质量是有害的。
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3.发明申请Methods for producing silicon nitride films and silicon oxynitride films by thermal chemical vapor deposition 有权通过热化学气相沉积制造氮化硅膜和氧氮化硅膜的方法公开(公告)号：US20050100670A1
公开(公告)日：2005-05-12
申请号：US10669623
申请日：2003-09-24
IPC分类号： C23C16/42 , C23C16/30 , C23C16/34 , H01L21/314 , H01L21/318 , C23C16/00
CPC分类号： H01L21/02271 , C23C16/308 , C23C16/345 , H01L21/0214 , H01L21/0217 , H01L21/02219 , H01L21/3145 , H01L21/3185
摘要： Silicon nitride film is formed on substrate (112) by feeding trisilylamine and ammonia into a CVD reaction chamber (11) that contains a substrate (112). The ammonia gas/trisilylamine gas flow rate ratio is set to a value of at least about 10 and/or the thermal CVD reaction is run at a temperature no greater than about 600° C. Silicon oxynitride is obtained by introducing an oxygen source gas into the CVD reaction chamber (11). This method avoids the production of ammonium chloride and/or the incorporation of carbonaceous contaminants which are detrimental to the quality of the deposited film.
摘要翻译： 通过将三甲胺和氨进料到含有基板（112）的CVD反应室（11）中，在基板（112）上形成氮化硅膜。 将氨气/三甲硅烷气体流量比设定为至少约10的值和/或热CVD反应在不高于约600℃的温度下运行。氮氧化硅通过将氧源气体引入 CVD反应室（11）。 该方法避免了氯化铵的生成和/或碳质污染物的结合，这对沉积膜的质量是有害的。
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4.发明申请METHODS FOR PRODUCING SILICON NITRIDE FILMS AND SILICON OXYNITRIDE FILMS BY THERMAL CHEMICAL VAPOR DEPOSITION 审中-公开通过热化学蒸气沉积生产硅酸盐膜和硅氧烷膜的方法公开(公告)号：US20070134433A1
公开(公告)日：2007-06-14
申请号：US11674895
申请日：2007-02-14
CPC分类号： H01L21/02271 , C23C16/308 , C23C16/345 , H01L21/0214 , H01L21/0217 , H01L21/02219 , H01L21/3145 , H01L21/3185
摘要： Silicon nitride film is formed on substrate (112) by feeding trisilylamine and ammonia into a CVD reaction chamber (11) that contains a substrate (112). The ammonia gas/trisilylamine gas flow rate ratio is set to a value of at least about 10 and/or the thermal CVD reaction is run at a temperature no greater than about 600° C. Silicon oxynitride is obtained by introducing an oxygen source gas into the CVD reaction chamber (11). This method avoids the production of ammonium chloride and/or the incorporation of carbonaceous contaminants which are detrimental to the quality of the deposited film.
摘要翻译： 通过将三甲胺和氨进料到含有基板（112）的CVD反应室（11）中，在基板（112）上形成氮化硅膜。 将氨气/三甲硅烷气体流量比设定为至少约10的值和/或热CVD反应在不高于约600℃的温度下运行。氮氧化硅通过将氧源气体引入 CVD反应室（11）。 该方法避免了氯化铵的生成和/或碳质污染物的结合，这对沉积膜的质量是有害的。
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公开(公告)号：US20050082002A1
公开(公告)日：2005-04-21
申请号：US10927097
申请日：2004-08-27
申请人： Yuusuke Sato , Naoki Tamaoki , Satoko Seta , Regis Zils , Jun Sonobe , Takako Kimura , Kayo Momoda
发明人： Yuusuke Sato , Naoki Tamaoki , Satoko Seta , Regis Zils , Jun Sonobe , Takako Kimura , Kayo Momoda
CPC分类号： B08B7/04 , B08B7/00 , C23C16/4405
摘要： A method of cleaning a film-forming apparatus to remove at least a part of a silicon-based material deposited on a constituent member of the film-forming apparatus after used to form thin films includes introducing a first-gas including fluorine gas and a second gas including nitrogen monoxide gas into the film-forming apparatus, and heating the constituent member. The constituent member includes quartz or silicon carbide, and the silicon-based material includes silicon nitride.
摘要翻译： 在形成薄膜之后，清洗膜形成装置以去除沉积在成膜装置的构成部件上的至少一部分硅基材料的方法包括：引入包含氟气的第一气体和第二气体 包括一氧化氮气体的气体进入成膜装置，并加热构成部件。 构成构件包括石英或碳化硅，硅基材料包括氮化硅。
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公开(公告)号：US07942974B2
公开(公告)日：2011-05-17
申请号：US11234105
申请日：2005-09-26
申请人： Naoki Tamaoki , Yuusuke Sato , Jun Sonobe , Takamitsu Shigemoto , Takako Kimura
发明人： Naoki Tamaoki , Yuusuke Sato , Jun Sonobe , Takamitsu Shigemoto , Takako Kimura
IPC分类号： B08B9/08
CPC分类号： B08B7/0035 , C23C16/4405
摘要： A method of cleaning a film-forming apparatus to remove a silicon-based material deposited on a constituent member of the film-forming apparatus after being used to form thin films includes introducing a first gas including fluorine gas and a second gas including carbon monoxide gas into the film-forming apparatus, and heating the constituent member. The constituent member includes quartz or silicon carbide and the silicon-based material includes silicon nitride, or the constituent member includes silicon carbide and the silicon-based material includes silicon oxide.
摘要翻译： 在形成薄膜之后，清洗成膜装置以去除沉积在成膜装置的构成部件上的硅基材料的方法包括：引入包含氟气的第一气体和包括一氧化碳气体的第二气体 进入成膜装置，并加热构成构件。 构成构件包括石英或碳化硅，硅基材料包括氮化硅，或者构成构件包括碳化硅，硅基材料包括氧化硅。
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公开(公告)号：US20060065289A1
公开(公告)日：2006-03-30
申请号：US11234105
申请日：2005-09-26
申请人： Naoki Tamaoki , Yuusuke Sato , Jun Sonobe , Takamitsu Shigemoto , Takako Kimura
发明人： Naoki Tamaoki , Yuusuke Sato , Jun Sonobe , Takamitsu Shigemoto , Takako Kimura
CPC分类号： B08B7/0035 , C23C16/4405
摘要： A method of cleaning a film-forming apparatus to remove a silicon-based material deposited on a constituent member of the film-forming apparatus after being used to form thin films includes introducing a first gas including fluorine gas and a second gas including carbon monoxide gas into the film-forming apparatus, and heating the constituent member. The constituent member includes quartz or silicon carbide and the silicon-based material includes silicon nitride, or the constituent member includes silicon carbide and the silicon-based material includes silicon oxide.
摘要翻译： 在形成薄膜之后，清洗成膜装置以去除沉积在成膜装置的构成部件上的硅基材料的方法包括：引入包含氟气的第一气体和包括一氧化碳气体的第二气体 进入成膜装置，并加热构成构件。 构成构件包括石英或碳化硅，硅基材料包括氮化硅，或者构成构件包括碳化硅，硅基材料包括氧化硅。
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8.发明授权Simulation method with respect to trace object that event occurs in proportion to probability and computer program product for causing computer system to perform the simulation 失效关于跟踪对象的仿真方法，事件与概率和计算机程序产品成比例，导致计算机系统执行仿真
公开(公告)号：US5926402A
公开(公告)日：1999-07-20
申请号：US811526
申请日：1997-03-04
IPC分类号： C30B28/12 , C23C16/52 , C30B29/06 , G06F17/50 , G06F19/00 , G06Q10/04 , G06Q50/00 , G06Q50/04 , H01L21/00 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , H01L21/66 , H01L29/00 , G06F9/44
CPC分类号： G06F17/5018 , G06F2217/10 , Y10T428/24975
摘要： A simulation method for performing a simulation with respect to a trace object that an event occurs depending on a probability in a domain to be analyzed. The simulation method includes the step of dividing a flowing field into cells serving as domains to be analyzed, the step of arranging molecules serving as the target object in the cells, the step of performing the simulation such that the molecules are moved in the cells and the number of stickings or a sticking amount occurring on a wall surface or a film portion as the result of the movement larger than the number of times of the event or a change amount led by the probability, and the step of outputting, as a simulation result, a film profile obtained as the result of the simulation.
摘要翻译： 一种仿真方法，用于根据待分析的域中的概率来执行关于事件发生的跟踪对象的模拟。 模拟方法包括将流场划分为用作要分析的域的小区的步骤，在小区中布置用作目标对象的分子的步骤，执行模拟以使分子在小区中移动的步骤，以及 作为移动结果的壁面或薄膜部分发生的粘附数或粘附量大于由概率引起的事件次数或变化量的次数，以及作为模拟输出的步骤 结果，作为模拟结果获得的电影资料。
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9.发明授权Ammonium halide eliminator, chemical vapor deposition system and chemical vapor deposition process 失效卤化铵消除器，化学气相沉积系统和化学气相沉积工艺公开(公告)号：US06365231B2
公开(公告)日：2002-04-02
申请号：US09344484
申请日：1999-06-25
IPC分类号： C23C1634
CPC分类号： C23C16/345 , C23C16/452
摘要： The present invention provides a chemical vapor deposition using, as feed gases, a silicon compound and hydrazine or a derivative thereof, or a compound containing both silicon and nitrogen, and a process and a system useful for chemical vapor deposition growth, in which a chlorinated silane compound and ammonia, feed gases, are preliminarily reacted with each other, and the resulting reaction gas mixture from which the ammonium halide produced by the preliminary reaction has been eliminated is fed to form a thin film on a substrate.
摘要翻译： 本发明提供使用作为原料气体的硅化合物和肼或其衍生物或含有硅和氮的化合物的化学气相沉积，以及用于化学气相沉积生长的方法和系统，其中氯化 硅烷化合物和氨，原料气体彼此预先反应，并且所得到的通过预反应产生的卤化铵的反应气体混合物被排出，在基板上形成薄膜。
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公开(公告)号：US6022806A
公开(公告)日：2000-02-08
申请号：US401904
申请日：1995-03-10
申请人： Yuusuke Sato , Naoki Tamaoki , Toshimitu Ohmine
发明人： Yuusuke Sato , Naoki Tamaoki , Toshimitu Ohmine
IPC分类号： C23C16/04 , C23C16/458 , H01L21/02 , H01L21/285 , H01L21/00 , C23C16/00
CPC分类号： C23C16/045 , C23C16/458 , H01L21/28556 , H01L28/86
摘要： A wafer having a recess with an aspect ratio of 0.5 or above on a surface to be processed is placed on a holder provided within a process chamber. A process gas consisting of a mixture of a material gas of SiH.sub.4 and a carrier gas of H.sub.2 is uniformly supplied to the surface of the wafer vertically. The pressure within the process chamber is set at 1 Torr or above. The temperature of the surface to be processed of the wafer is set at 600.degree. C. to 800.degree. C. Under these conditions, a polysilicon film is formed in the recess by a vapor phase growth method. During the formation of the film, the wafer is rotated at 500 rpm or above by an output of a motor via a holder. Thereby, a high film formation rate and a good step coverage can be made compatible.
摘要翻译： 将待处理表面上具有纵横比为0.5以上的凹部的晶片放置在处理室内的保持器上。 由SiH4的原料气体和H2的载气组成的工艺气体被均匀地提供给晶片的表面。 处理室内的压力设定在1乇或以上。 将晶片的待处理表面的温度设定为600℃〜800℃。在这些条件下，通过气相生长法在凹部中形成多晶硅膜。 在膜的形成期间，晶片经由保持器通过马达的输出以500rpm或更高的速度旋转。 由此，能够使成膜率高，步骤覆盖性良好。
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