发明申请
US20060199021A1 Composition, methods for forming low-permittivity film using the composition, low-permittivity film, and electronic part having the low-permittivity film
审中-公开
组合物,使用该组合物形成低电容率膜的方法,低介电常数薄膜和具有低介电常数膜的电子部件
- 专利标题: Composition, methods for forming low-permittivity film using the composition, low-permittivity film, and electronic part having the low-permittivity film
- 专利标题(中): 组合物,使用该组合物形成低电容率膜的方法,低介电常数薄膜和具有低介电常数膜的电子部件
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申请号: US11430865申请日: 2006-05-10
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公开(公告)号: US20060199021A1公开(公告)日: 2006-09-07
- 发明人: Takenori Narita , Hiroyuki Morisima , Shigeru Nobe , Kazuhiro Enomoto , Haruaki Sakurai , Nobuko Terada
- 申请人: Takenori Narita , Hiroyuki Morisima , Shigeru Nobe , Kazuhiro Enomoto , Haruaki Sakurai , Nobuko Terada
- 优先权: JP261391/1999 19990916
- 主分类号: B32B27/00
- IPC分类号: B32B27/00 ; H01L21/00 ; C08L83/00 ; C08G77/00
摘要:
The present invention provides a composition comprising (a) a thermally decomposable polymer and (b) a siloxane oligomer evenly dissolved in (c) an organic solvent; a composition comprising (a) a thermally decomposable polymer, (b) a siloxane oligomer, and (c) an organic solvent in which both of the ingredients (a) and (b) are soluble; a method for forming a low-permittivity film characterized by applying the composition to a substrate to form a composite film comprising the thermally decomposable polymer and the siloxane oligomer evenly compatibilized therewith and then heating the resulting film to condense the siloxane oligomer and remove the thermally decomposable polymer; a method for forming a low-permittivity film characterized by applying the composition to a substrate to form a composite film comprising the thermally decomposable polymer and the siloxane oligomer evenly compatibilized therewith, subsequently conducting a first heating step in which the siloxane oligomer is crosslinked while keeping the thermally decomposable polymer remaining in the film, and then conducting a second heating step in which the thermally decomposable polymer is removed; a low-permittivity film formed by either of the methods for low-permittivity film formation; and an electronic part having the low-permittivity film.
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